School of Mechanical, Aerospace, Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287, USA.
J Chem Phys. 2010 Mar 7;132(9):094104. doi: 10.1063/1.3327684.
Oxygen vacancy formation and migration in ceria (CeO(2)) is central to its performance as an ionic conductor. It has been observed that ceria doped with suitable aliovalent cationic dopants improves its ionic conductivity. To investigate this phenomenon, we present total energy calculations within the framework of density functional theory to study oxygen vacancy migration in ceria and Pr-doped ceria (PDC). We report activation energies for oxygen vacancy formation and migration in undoped ceria and for different migration pathways in PDC. The activation energy value for oxygen vacancy migration in undoped ceria was found to be in reasonable agreement with the available experimental and theoretical results. Conductivity values for reduced undoped ceria calculated using theoretical activation energy and attempt frequency were found in reasonably good agreement with the experimental data. For PDC, oxygen vacancy formation and migration were investigated at first, second, and third nearest neighbor positions to a Pr ion. The second nearest neighbor site is found to be the most favorable vacancy formation site. Vacancy migration between first, second, and third nearest neighbors was calculated (nine possible jumps), with activation energies ranging from 0.41 to 0.78 eV for first-nearest-neighbor jumps. Overall, the presence of Pr significantly affects vacancy formation and migration, in a complex manner requiring the investigation of many different migration events. We propose a relationship illuminating the role of additional dopants toward lowering the activation energy for vacancy migration in PDC.
在氧化铈(CeO(2))中,氧空位的形成和迁移对于其作为离子导体的性能至关重要。已经观察到,用合适的等价阳离子掺杂剂掺杂的氧化铈可以提高其离子电导率。为了研究这一现象,我们在密度泛函理论的框架内进行了总能量计算,以研究氧化铈和掺镨氧化铈(PDC)中的氧空位迁移。我们报告了未掺杂氧化铈和 PDC 中不同迁移途径中氧空位形成和迁移的激活能。未掺杂氧化铈中氧空位迁移的激活能值与可用的实验和理论结果相当吻合。使用理论激活能和尝试频率计算的还原未掺杂氧化铈的电导率值与实验数据相当吻合。对于 PDC,首先研究了氧空位在镨离子的第一、第二和第三近邻位置的形成和迁移。发现第二近邻位置是最有利的空位形成位置。计算了第一、第二和第三近邻之间的空位迁移(九种可能的跳跃),对于第一近邻跳跃,激活能范围为 0.41 到 0.78eV。总的来说,镨的存在显著影响了空位的形成和迁移,这是一种复杂的方式,需要研究许多不同的迁移事件。我们提出了一种关系,阐明了额外掺杂剂在降低 PDC 中空位迁移的激活能方面的作用。