Kajimura T, Kuroda T, Yamashita S, Nakamura M, Umeda J
Appl Opt. 1979 Jun 1;18(11):1812-5. doi: 10.1364/AO.18.001812.
Transverse-mode stabilized visible diode lasers in the 0.7-microm wavelength region are fabricated by growing a Ga(1-x)Al(x)As double heterostructure on a grooved GaAs substrate (channeled-substrate-planar structure). The diodes operate stably in the fundamental transverse mode and provide nonstigmatic laser beams. They can be collimated with a 0.5-1-mrad beam divergence using a simple graded-index fiber lens. Corresponding to single-longitudinal-mode operation at current levels above 1.1 times the threshold, a coherence length as long as 14 m is obtained in Michelson interference experiments.
通过在带槽的砷化镓衬底上生长Ga(1-x)Al(x)As双异质结构(沟道衬底平面结构)来制造波长在0.7微米区域的横向模式稳定可见二极管激光器。这些二极管在基横模下稳定工作,并提供无像散激光束。使用简单的渐变折射率光纤透镜,它们可以准直成发散角为0.5 - 1毫弧度的光束。在高于阈值1.1倍的电流水平下实现单纵模工作时,在迈克尔逊干涉实验中获得了长达14米的相干长度。