将一个GaAlAs双异质结激光二极管边缘耦合到一个平面钛扩散铌酸锂（Ti:LiNbO₃）波导上。

Edge coupling of a GaAlAs DH laser diode to a planar Ti:LiNbO(3) waveguide.

作者信息

Hall D G, Spear-Zino J D, Koenig H G, Rice R R, Powers J K, Burkhart G H, Bear P D

出版信息

Appl Opt. 1980 Jun 1;19(11):1847-52. doi: 10.1364/AO.19.001847.

DOI:10.1364/AO.19.001847

PMID:20221134

Abstract

The problem of edge coupling a double-heterostructure GaAlAs laser diode to a planar titanium indiffused LiNbO(3) waveguide has been studied both experimentally and theoretically. Alignment sensitivities (3-dB points) have been measured and found to be ~15 and 1 microm in the longitudinal and transverse directions, respectively. The dependence of the coupling efficiency on misalignments has been found to be in good agreement with the predictions of a simple Gaussian coupling model. In addition, a prototype coupler has been fabricated in a flip-chip configuration on a silicon substrate with ~15% coupling efficiency into the waveguide's fundamental mode.

摘要

对双异质结构GaAlAs激光二极管与平面钛扩散LiNbO(3)波导的边缘耦合问题进行了实验和理论研究。已测量了对准灵敏度（3分贝点），发现纵向和横向分别约为15微米和1微米。已发现耦合效率与对准误差的依赖关系与简单高斯耦合模型的预测结果吻合良好。此外，已在硅衬底上以倒装芯片结构制造了一个原型耦合器，其耦合到波导基模的效率约为15%。