National Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun, People's Republic of China.
Nanotechnology. 2010 Apr 9;21(14):145703. doi: 10.1088/0957-4484/21/14/145703. Epub 2010 Mar 11.
Based on the Kubo formula, we have studied the electron transport properties of a gapped graphene in the presence of a strong magnetic field. By solving the Dirac equation, we find that the Landau level spectra in two valleys differ from each other in that the n = 0 level in the K valley is located at top of the valence band, whereas it is at the bottom of the conduction band in the K' valley. Thus, in an individual valley, the symmetry between conduction and valence bands is broken by the presence of a magnetic field. By using the self-consistent Born approximation to treat the long range potential scattering, we formulate the diagonal and the Hall conductivities in terms of the Green function. To perform the numerical calculation, we find that a large bandgap can suppress the quantum Hall effect, owing to the enhancement of the bandgap squeezing the spacing between the low-lying Landau levels. On the other hand, if the bandgap is not very large, the odd integer quantum Hall effect experimentally, observed in the gapless graphene, remains in the gapped one. However, such a result does not indicate the half integer quantum Hall effect in an individual valley of the gapped graphene. This is because the heights of the Hall plateaux in either valley can be continuously tuned by the variation of the bandgap. More interestingly, we find that the height of the diagonal conductivity peak corresponding to the n = 0 Landau level is independent of the bandgap if the scattering is not very strong. In the weak scattering limit, we demonstrate analytically that such a peak takes a universal value e(2)/(hpi), regardless of the bandgap.
基于 Kubo 公式,我们研究了在强磁场存在下具有能隙的石墨烯中的电子输运性质。通过求解狄拉克方程,我们发现两个谷中的朗道能级谱彼此不同,因为 K 谷中的 n = 0 能级位于价带顶部,而在 K'谷中位于导带底部。因此,在单个谷中,磁场的存在打破了导带和价带之间的对称性。通过使用自洽 Born 近似来处理长程势散射,我们用格林函数来表示对角和 Hall 电导率。为了进行数值计算,我们发现大的能隙可以抑制量子霍尔效应,因为能带隙的增强压缩了低能朗道能级之间的间隔。另一方面,如果能带隙不是很大,则在无带隙石墨烯中观察到的奇数整数量子霍尔效应在带隙石墨烯中仍然存在。然而,这样的结果并不表明带隙石墨烯的单个谷中的半整数量子霍尔效应。这是因为 Hall 平台的高度在任何一个谷中都可以通过能带隙的变化连续调节。更有趣的是,我们发现,如果散射不是很强,则对应于 n = 0 朗道能级的对角电导率峰值的高度与能带隙无关。在弱散射极限下,我们从解析上证明了这样的峰值取一个通用值 e(2)/(hpi),而与能带隙无关。