Department of Physics, University of Sargodha, Sargodha 40100, Pakistan.
J Phys Condens Matter. 2012 Apr 4;24(13):135005. doi: 10.1088/0953-8984/24/13/135005. Epub 2012 Mar 5.
We present a theoretical study of gap opening in the zeroth Landau level in gapped graphene as a result of pseudo-Zeeman interaction. The applied magnetic field couples with the valley pseudospin degree of freedom of the charge carriers leading to the pseudo-Zeeman interaction. To investigate its role in transport at the charge neutrality point (CNP), we study the integer quantum Hall effect in gapped graphene in an angular magnetic field in the presence of pseudo-Zeeman interaction. Analytical expressions are derived for the Hall conductivity using the Kubo-Greenwood formula. We also determine the longitudinal conductivity for elastic impurity scattering in the first Born approximation. We show that pseudo-Zeeman splitting leads to a minimum in the collisional conductivity at high magnetic fields and a zero plateau in the Hall conductivity. Evidence for activated transport at CNP is found from the temperature dependence of the collisional conductivity.
我们提出了一个理论研究,研究在零带隙石墨烯中由于赝塞曼相互作用而导致的能隙打开。外加磁场与载流子的谷赝自旋自由度耦合,导致赝塞曼相互作用。为了研究其在电荷中性点(CNP)处输运的作用,我们在存在赝塞曼相互作用的情况下,在角磁场中研究了带隙石墨烯中的整数量子霍尔效应。利用库伯-格林伍德公式推导出了霍尔电导率的解析表达式。我们还在第一玻恩近似下确定了弹性杂质散射的纵向电导率。我们表明,赝塞曼分裂导致在高磁场下碰撞电导率的最小值和霍尔电导率的零平台。从碰撞电导率的温度依赖性中发现了 CNP 处的激活输运的证据。