Department of Physiology and Neurobiology, Faculty of Health Sciences, and Zlotowski Center for Neuroscience, Ben-Gurion University of Negev, Beer-Sheva 84105, Israel.
Neural Comput. 2010 Jul;22(7):1764-85. doi: 10.1162/neco.2010.07-09-1054.
We simulate reconstructed alpha-motoneurons (MNs) under physiological and morphological realistic parameters and compare the modeled reciprocal (REC) and recurrent (REN) inhibitory postsynaptic potentials (IPSPs) containing voltage-dependent channels on the dendrites with the IPSPs of a passive MN model. Three distribution functions of the voltage-dependent channels on the dendrites are applied: a step function (ST) with uniform spatial dispersion; an exponential decay (ED) function, with channels with high density located proximal to the soma; and an exponential rise (ER) with a higher density of channels located distally. The excitatory and REN inhibitory inputs are located as a gaussian function on the dendrites, while the REC inhibitory synapses are located proximal to the soma. Our simulations generate four key results. (1) The distribution pattern of the voltage-dependent channels does not affect the IPSP peak, its time integral (TI), or its rate of rise (RR). However, the IPSP peak decreased in the presence of the active dendrites, while the EPSP peak increased. (2) Proximally located IPSP conductance produces greater IPSP peak, RR, and TI. (3) Increased duration of the IPSP produces greater RR and moderately increased TI and has a small effect on the peak amplitude. (4) The IPSP of both REC and REN models is specific to each MN: its amplitude is proportional to the MNs' input resistance, R(N); the increase of IPSP at the proximal location of the IPSP synapses is inversely related to R(N); and the effect of the IPSP conductance duration is insensitive to R(N).
我们模拟了生理和形态上逼真的重构α运动神经元(MN),并将包含树突上电压依赖性通道的模型化的反向(REC)和重复(REN)抑制性突触后电位(IPSP)与被动 MN 模型的 IPSP 进行了比较。在树突上应用了三种电压依赖性通道的分布函数:具有均匀空间分散的阶跃函数(ST);具有高密度通道位于近体部位的指数衰减(ED)函数;以及具有位于远侧的较高密度通道的指数上升(ER)函数。兴奋性和 REN 抑制性输入位于树突上的高斯函数中,而 REC 抑制性突触位于近体部位。我们的模拟产生了四个关键结果。(1)电压依赖性通道的分布模式不会影响 IPSP 峰值、其时间积分(TI)或上升速率(RR)。然而,存在活性树突时 IPSP 峰值降低,而 EPSP 峰值增加。(2)位于近体部位的 IPSP 电导产生更大的 IPSP 峰值、RR 和 TI。(3)IPSP 持续时间增加会产生更大的 RR 和适度增加的 TI,对峰值幅度的影响较小。(4)REC 和 REN 模型的 IPSP 对每个 MN 都是特定的:其幅度与 MN 的输入电阻,R(N)成正比;在 IPSP 突触的近体部位增加 IPSP 与 R(N)成反比;而 IPSP 电导持续时间的影响对 R(N)不敏感。