State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.
Chemistry. 2010 Apr 26;16(16):4852-63. doi: 10.1002/chem.200902664.
A series of open-framework aluminoborates (ABOs) [M(dien)(2)][AlB(6)O(11)(OH)] (M=Co (I a), Ni (I b), Cd (I c), Zn (I d); dien=diethylenetriamine) and [M(en)(3)][AlB(7)O(12)(OH)(2)] (H(2)O)(0.25) (M=Co (II a), Ni (II b); en=ethylenediamine) have been made under hydrothermal conditions and characterized by elemental analysis, IR spectroscopy, thermogravimetric analysis, UV/Vis and fluorescence spectroscopy, powder X-ray diffraction, single-crystal X-ray diffraction, and nonlinear optical determination. These compounds were classified as two structural types: Type I (I a-d) contains AlO(4) tetrahedra and B(6)O(11)(OH) clusters, which link to form a new 3D framework with 7-/9-ring helical channels and large 13-ring channels; whereas type II (II a,b) is composed of AlO(4) tetrahedra, chainlike B(4)O(6)(OH)(2) tetramer, and crablike B(6)O(12) clusters, which interconnect to form other new 3D frameworks with 8-ring helical channels, rare 16-ring double-helical channels, and larger odd 15-ring channels. These compounds represent the first examples of 3D ABOs templated by transition-metal complexes (TMCs). I c,d present good second harmonic generation (SHG) properties. UV/Vis spectral investigation indicates that I a-d and II a,b are wide-band-gap semiconductors.
一系列开放骨架的铝硼酸盐（ABO）[M(dien)(2)][AlB(6)O(11)(OH)]（M=Co（I a），Ni（I b），Cd（I c），Zn（I d）；dien=二乙三胺）和[M(en)(3)][AlB(7)O(12)(OH)(2)]（H(2)O）(0.25)（M=Co（II a），Ni（II b）；en=乙二胺）在水热条件下被合成，并通过元素分析、红外光谱、热重分析、紫外/可见和荧光光谱、粉末 X 射线衍射、单晶 X 射线衍射和非线性光学测定进行了表征。这些化合物被分为两种结构类型：I 型（I a-d）包含 AlO(4)四面体和 B(6)O(11)(OH)簇，它们连接形成一个具有 7-/9 环螺旋孔道和大 13 环孔道的新 3D 骨架；而 II 型（II a,b）由 AlO(4)四面体、链状 B(4)O(6)(OH)(2)四聚体和蟹状 B(6)O(12)簇组成，它们相互连接形成具有 8 环螺旋孔道、罕见的 16 环双螺旋孔道和更大的奇数 15 环孔道的其他新 3D 骨架。这些化合物代表了由过渡金属配合物（TMCs）模板的第一个 3D ABO 实例。I c,d 具有良好的二次谐波产生（SHG）性能。紫外/可见光谱研究表明，I a-d 和 II a,b 是宽带隙半导体。
