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二氮杂芴衍生物作为薄膜晶体管材料:在实现高场效应迁移率方面的形态控制。

Diazapentacene derivatives as thin-film transistor materials: morphology control in realizing high-field-effect mobility.

机构信息

Institute of Chemistry, Academia Sinica, Taipei 115, Taiwan, Republic of China.

出版信息

ACS Appl Mater Interfaces. 2009 Sep;1(9):2071-9. doi: 10.1021/am9004418.

Abstract

5,7,12,14-Tetrachloro-6,13-diaza-6,13-dihydropentacene (TCDAHP) and 5,7,12,14-tetrachloro-6,13-diazapentacene (TCDAP) were synthesized and assessed as the active channel materials for thin-film transistor applications. Analyses of the crystal structures of these molecules revealed that both exhibited slipped pi-pi stacking of the long and fused aromatic moiety. Although the packing features of the two compounds are basically identical, their highest occupied molecular orbitals, which are relevant to hole transport, are very different. Better mobility was predicted for TCDAHP over TCDAP based on the dimeric structure in the X-ray coordinates. The morphologies of thin films of TCDAHP and TCDAP prepared by thermal evaporation depend critically on the substrate on which the molecules were deposited: from the amorphous state on a SiO(2)/Si surface to the crystalline state on a pentacene buffer layer surface. The performance of thin-film transistors prepared on various substrate surfaces was studied. While no field-effect mobility was observed for these films deposited on SiO(2)/Si, a high mobility of 1.4 cm(2)/(V s) for the TCDAHP film was achieved when deposited on a pentacene buffer layer prepared on a rubbed monolayer of n-nonyltrichlorosilane on a SiO(2)/Si surface. A similar device prepared from TCDAP gave a mobility of 0.13 cm(2)/(V s).

摘要

5,7,12,14-四氯-6,13-二氮杂-6,13-二氢并五苯(TCDAHP)和 5,7,12,14-四氯-6,13-二氮杂并五苯(TCDAP)被合成并评估为用于薄膜晶体管应用的活性沟道材料。这些分子的晶体结构分析表明,它们都表现出长的和稠合的芳族部分的滑动π-π堆积。尽管这两种化合物的堆积特征基本相同,但与其空穴传输相关的最高占据分子轨道却非常不同。根据 X 射线坐标中的二聚体结构,TCDAHP 预测具有比 TCDAP 更好的迁移率。TCDAHP 和 TCDAP 的热蒸发薄膜的形态取决于沉积分子的基底:从 SiO2/Si 表面的非晶态到 pentacene 缓冲层表面的晶态。研究了在各种基底表面上制备的薄膜晶体管的性能。虽然沉积在 SiO2/Si 上的这些薄膜没有观察到场效应迁移率,但当沉积在在 SiO2/Si 表面的 n-壬基三氯硅烷单层摩擦上制备的 pentacene 缓冲层上时,TCDAHP 薄膜的迁移率达到了 1.4 cm2/(Vs)。从 TCDAP 制备的类似器件的迁移率为 0.13 cm2/(Vs)。

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