• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

二氮杂芴衍生物作为薄膜晶体管材料:在实现高场效应迁移率方面的形态控制。

Diazapentacene derivatives as thin-film transistor materials: morphology control in realizing high-field-effect mobility.

机构信息

Institute of Chemistry, Academia Sinica, Taipei 115, Taiwan, Republic of China.

出版信息

ACS Appl Mater Interfaces. 2009 Sep;1(9):2071-9. doi: 10.1021/am9004418.

DOI:10.1021/am9004418
PMID:20355835
Abstract

5,7,12,14-Tetrachloro-6,13-diaza-6,13-dihydropentacene (TCDAHP) and 5,7,12,14-tetrachloro-6,13-diazapentacene (TCDAP) were synthesized and assessed as the active channel materials for thin-film transistor applications. Analyses of the crystal structures of these molecules revealed that both exhibited slipped pi-pi stacking of the long and fused aromatic moiety. Although the packing features of the two compounds are basically identical, their highest occupied molecular orbitals, which are relevant to hole transport, are very different. Better mobility was predicted for TCDAHP over TCDAP based on the dimeric structure in the X-ray coordinates. The morphologies of thin films of TCDAHP and TCDAP prepared by thermal evaporation depend critically on the substrate on which the molecules were deposited: from the amorphous state on a SiO(2)/Si surface to the crystalline state on a pentacene buffer layer surface. The performance of thin-film transistors prepared on various substrate surfaces was studied. While no field-effect mobility was observed for these films deposited on SiO(2)/Si, a high mobility of 1.4 cm(2)/(V s) for the TCDAHP film was achieved when deposited on a pentacene buffer layer prepared on a rubbed monolayer of n-nonyltrichlorosilane on a SiO(2)/Si surface. A similar device prepared from TCDAP gave a mobility of 0.13 cm(2)/(V s).

摘要

5,7,12,14-四氯-6,13-二氮杂-6,13-二氢并五苯(TCDAHP)和 5,7,12,14-四氯-6,13-二氮杂并五苯(TCDAP)被合成并评估为用于薄膜晶体管应用的活性沟道材料。这些分子的晶体结构分析表明,它们都表现出长的和稠合的芳族部分的滑动π-π堆积。尽管这两种化合物的堆积特征基本相同,但与其空穴传输相关的最高占据分子轨道却非常不同。根据 X 射线坐标中的二聚体结构,TCDAHP 预测具有比 TCDAP 更好的迁移率。TCDAHP 和 TCDAP 的热蒸发薄膜的形态取决于沉积分子的基底:从 SiO2/Si 表面的非晶态到 pentacene 缓冲层表面的晶态。研究了在各种基底表面上制备的薄膜晶体管的性能。虽然沉积在 SiO2/Si 上的这些薄膜没有观察到场效应迁移率,但当沉积在在 SiO2/Si 表面的 n-壬基三氯硅烷单层摩擦上制备的 pentacene 缓冲层上时,TCDAHP 薄膜的迁移率达到了 1.4 cm2/(Vs)。从 TCDAP 制备的类似器件的迁移率为 0.13 cm2/(Vs)。

相似文献

1
Diazapentacene derivatives as thin-film transistor materials: morphology control in realizing high-field-effect mobility.二氮杂芴衍生物作为薄膜晶体管材料:在实现高场效应迁移率方面的形态控制。
ACS Appl Mater Interfaces. 2009 Sep;1(9):2071-9. doi: 10.1021/am9004418.
2
Synthesis, characterization, and field-effect transistor properties of carbazolenevinylene oligomers: from linear to cyclic architectures.咔唑乙烯撑低聚物的合成、表征及场效应晶体管性能:从线性到环状结构
Chemistry. 2008;14(15):4731-40. doi: 10.1002/chem.200800008.
3
High mobility n-channel single-crystal field-effect transistors based on 5,7,12,14-tetrachloro-6,13-diazapentacene.基于 5,7,12,14-四氯-6,13-二氮杂戊并菲的高迁移率 n 通道单晶场效应晶体管。
Chem Commun (Camb). 2011 Jun 14;47(22):6356-8. doi: 10.1039/c1cc11762a. Epub 2011 May 3.
4
Thin film structure of tetraceno[2,3-b]thiophene characterized by grazing incidence X-ray scattering and near-edge X-ray absorption fine structure analysis.通过掠入射X射线散射和近边X射线吸收精细结构分析表征的并四苯[2,3-b]噻吩薄膜结构
J Am Chem Soc. 2008 Mar 19;130(11):3502-8. doi: 10.1021/ja0773002. Epub 2008 Feb 23.
5
Effects of the silicon core structures on the hole mobility of star-shaped oligothiophenes.星形寡聚噻吩的硅核结构对空穴迁移率的影响。
Dalton Trans. 2010 Oct 21;39(39):9314-20. doi: 10.1039/c0dt00224k. Epub 2010 Aug 4.
6
Synthesis, structural characterization, and unusual field-effect behavior of organic transistor semiconductor oligomers: inferiority of oxadiazole compared with other electron-withdrawing subunits.有机晶体管半导体低聚物的合成、结构表征及异常场效应行为:恶二唑与其他吸电子亚基相比的劣势
J Am Chem Soc. 2009 Feb 11;131(5):1692-705. doi: 10.1021/ja807219x.
7
A high-performance organic field-effect transistor based on platinum(II) porphyrin: peripheral substituents on porphyrin ligand significantly affect film structure and charge mobility.基于铂(II)卟啉的高性能有机场效应晶体管:卟啉配体上的外围取代基显著影响薄膜结构和电荷迁移率。
Chem Asian J. 2008 Jul 7;3(7):1092-103. doi: 10.1002/asia.200800011.
8
Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method.通过中性团簇束沉积法制备的并四苯和并五苯基有机薄膜晶体管的研究。
J Phys Chem B. 2005 Dec 22;109(50):23918-24. doi: 10.1021/jp054894r.
9
A flexible amorphous Bi(5)Nb(3)O(15) film for the gate insulator of the low-voltage operating pentacene thin-film transistor fabricated at room temperature.一种用于室温下制备的低电压工作的五苯烯薄膜晶体管栅极绝缘体的柔性非晶态 Bi(5)Nb(3)O(15) 薄膜。
Langmuir. 2009 Oct 20;25(20):12349-54. doi: 10.1021/la9016504.
10
High-performance air-stable n-channel organic thin film transistors based on halogenated perylene bisimide semiconductors.基于卤化苝二酰亚胺半导体的高性能空气稳定型n沟道有机薄膜晶体管。
J Am Chem Soc. 2009 May 6;131(17):6215-28. doi: 10.1021/ja901077a.

引用本文的文献

1
Azaacenes Based Electroactive Materials: Preparation, Structure, Electrochemistry, Spectroscopy and Applications-A Critical Review.基于氮杂蒽的电活性材料:制备、结构、电化学、光谱学及应用——综述
Materials (Basel). 2021 Sep 8;14(18):5155. doi: 10.3390/ma14185155.
2
High-Resolution Electronic Excitation and Emission Spectra of Pentacene and 6,13-Diazapentacene Monomers and Weakly Bound Dimers by Matrix-Isolation Spectroscopy.并五苯和6,13-二氮杂并五苯单体及弱束缚二聚体的高分辨率电子激发与发射光谱的基质隔离光谱研究
Chemistry. 2021 Jan 26;27(6):2072-2081. doi: 10.1002/chem.202003999. Epub 2020 Dec 22.
3
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors.
弯曲对基于柔性有机单晶的场效应晶体管电学特性的影响。
J Vis Exp. 2016 Nov 7(117):54651. doi: 10.3791/54651.