Lee Taegweon, Landis Chad A, Dhar Bal Mukund, Jung Byung Jun, Sun Jia, Sarjeant Amy, Lee Ho-Jin, Katz Howard E
Department of Materials Science and Engineering and Department of Chemistry, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland 21218, USA.
J Am Chem Soc. 2009 Feb 11;131(5):1692-705. doi: 10.1021/ja807219x.
A new series of heterocyclic oligomers based on the 1,3,4-oxadiazole ring were synthesized. Other electron-deficient cores (fluorenone and fumaronitrile) were introduced to investigate the oligomers as n-channel materials. The physical properties, thin film morphologies, and field-effect transistor characteristics of the oligomers were evaluated. Thin films were deposited at different substrate temperatures and on variously coated Si/SiO(2) for device optimization. Contrary to our expectations, the thin film devices of 4 revealed p-channel behavior, and the average hole mobility was 0.14 cm(2) V(-1) s(-1) (maximum value 0.18 cm(2) V(-1) s(-1)). Compound 11 is the first example of an oxadiazole-containing organic semiconductor (OSC) oligomer in an n-channel organic field-effect transistor (OFET) and shows moderate mobilities. Non-oxadiazole-containing oligomers 9 and 12 showed n-channel OFET behavior on hexamethyldisilazane-treated and Cytop spin-coated SiO(2) in vacuum. These are the first fluorenone- and fumaronitrile-based n-OSCs demonstrated in transistors. However, oxadiazole-core materials 14 and 16 were inactive in transistor devices.
合成了一系列基于1,3,4 - 恶二唑环的新型杂环低聚物。引入了其他缺电子核心（芴酮和富马腈）来研究这些低聚物作为n沟道材料的性能。对这些低聚物的物理性质、薄膜形态和场效应晶体管特性进行了评估。为了优化器件，在不同的衬底温度下以及在各种涂覆的Si/SiO₂上沉积薄膜。与我们的预期相反，化合物4的薄膜器件表现出p沟道行为，平均空穴迁移率为0.14 cm² V⁻¹ s⁻¹（最大值为0.18 cm² V⁻¹ s⁻¹）。化合物11是n沟道有机场效应晶体管（OFET）中含恶二唑有机半导体（OSC）低聚物的首个实例，并且表现出适度的迁移率。不含恶二唑的低聚物9和12在真空中经六甲基二硅氮烷处理和Cytop旋涂的SiO₂上表现出n沟道OFET行为。这些是在晶体管中首次展示的基于芴酮和富马腈的n型有机半导体。然而，含恶二唑核心的材料14和16在晶体管器件中无活性。
