Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA.
ACS Appl Mater Interfaces. 2009 Oct;1(10):2363-70. doi: 10.1021/am9004978.
We report a new approach to solution-processable low-dielectric-constant (low-k) materials including photolithographic patterning of these materials in chemically benign and environmentally friendly solvents. A series of semiperfluorinated molecular glasses with styrenic substituents were successfully synthesized. These small molecular materials were thermally stable up to 400 degrees C and also exhibited an amorphous nature, which is essential to forming uniform films. Differential scanning calorimetry studies revealed that a cross-linking reaction occurred in the presence of acid, resulting in the formation of robust polymeric films. Atomic force microscopy images of the cross-linked films showed uniform and pinhole-free surface properties. Dielectric constants determined by a capacitance measurement were 2.6-2.8 (100 kHz) at ambient conditions, which are comparable to other polymeric low-k materials. The incorporation of semiperfluorinated substituents was effective in decreasing the dielectric constant; in particular, the fluorinated alkyl ether structure proved best. In addition, the fluorinated substituents contributed to good solubility in hydrofluoroether (HFE) solvents, which enabled the successful photolithographic patterning of those materials in HFEs down to a submicrometer scale.
我们报告了一种新的方法来制备可溶性低介电常数(low-k)材料,包括这些材料在化学上良性和环境友好的溶剂中的光刻图案化。成功合成了一系列具有苯乙烯取代基的半氟化分子玻璃。这些小分子材料在高达 400°C 的温度下热稳定,并且还表现出非晶态性质,这对于形成均匀的薄膜是必不可少的。差示扫描量热法研究表明,在酸的存在下发生了交联反应,形成了坚固的聚合物薄膜。交联薄膜的原子力显微镜图像显示出均匀且无针孔的表面性质。在环境条件下通过电容测量确定的介电常数为 2.6-2.8(100 kHz),与其他聚合物低-k 材料相当。半氟化取代基的掺入有效地降低了介电常数;特别是,氟化烷基醚结构效果最好。此外,氟取代基有助于在氢氟醚(HFE)溶剂中的良好溶解性,这使得这些材料在 HFEs 中的光刻图案化能够达到亚微米级。