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稀磁半导体 Ga1-xMnxAs 中磁学的非局域效应。

Nonlocal effects on magnetism in the diluted magnetic semiconductor Ga1-xMnxAs.

机构信息

Department of Physics and Astronomy & Center for Computation and Technology, Louisiana State University, Baton Rouge, Louisiana 70803, USA.

出版信息

Phys Rev Lett. 2010 Jan 22;104(3):037201. doi: 10.1103/PhysRevLett.104.037201. Epub 2010 Jan 19.

Abstract

The magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs are studied within the dynamical cluster approximation. We use the k x p Hamiltonian to describe the electronic structure of GaAs with spin-orbit coupling and strain effects. We show that nonlocal effects are essential for explaining the experimentally observed transition temperature and saturation magnetization. We also demonstrate that the cluster anisotropy is very strong and induces rotational frustration and a cube-edge direction magnetic anisotropy at low temperature. With this, we explain the temperature-driven spin reorientation in this system.

摘要

本文在动态团簇近似下研究了稀磁半导体 Ga1-xMnxAs 的磁性。我们使用 k x p 哈密顿量来描述具有自旋轨道耦合和应变效应的 GaAs 的电子结构。我们表明,非局域效应对于解释实验观测到的转变温度和饱和磁化强度是至关重要的。我们还证明了团簇各向异性非常强,在低温下诱导出旋转受挫和立方边方向的磁各向异性。由此,我们解释了该体系中温度驱动的自旋重取向。

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