Amirthapandian S, Schuchart F, Bolse W
Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany.
Rev Sci Instrum. 2010 Mar;81(3):033702. doi: 10.1063/1.3316803.
A new in situ high resolution electron microscope (HRSEM) setup has been designed and integrated into the materials science beamline (M-branch) of the universal linear accelerator at Gesellschaft für Schwerionenforschung, Darmstadt for in situ investigations of swift heavy ion induced surface modifications. Special ports for in situ experiments are installed at the HRSEM chamber to connect it to the high vacuum beamline, which is equipped with suitable beam control and shaping devices. In order to demonstrate the feasibility and power of this new instrument, first experiments were performed on a 50-nm-thick Fe(2)O(3) film on Si substrate, which exhibited submicrometer size holes due to irradiation induced dewetting in a previous experiment. We have demonstrated that with our new instrument, the development of individual dewetting holes as a function of the ion fluence can be investigated and even the interaction between them can be studied. To illustrate pattern formation during grazing incidence, 3.6 MeV/u (131)Xe ion irradiation was carried out on a 25-nm-thick NiO film on SiO(2)/Si at a tilt angle of 75 degrees. The SEM image sequence recorded during the experiment reveals the development of a lamellaelike structure also seen before in ex situ experiments. With our new in situ setup, however, we are able to not only investigate the overall average pattern formation, but also to track the formation and decay of individual linking structures, which would be hardly possible in a standard ex situ experiment.
一种新型的原位高分辨率电子显微镜（HRSEM）装置已被设计出来，并集成到位于达姆施塔特的重离子研究中心的通用直线加速器的材料科学光束线（M分支）中，用于对快速重离子诱导的表面改性进行原位研究。在HRSEM腔室安装了用于原位实验的特殊端口，以便将其连接到配备有合适束流控制和整形装置的高真空光束线。为了证明这种新仪器的可行性和效能，首先在硅衬底上50纳米厚的Fe(2)O(3)薄膜上进行了实验，该薄膜在先前的实验中由于辐照诱导的去湿而呈现出亚微米尺寸的孔洞。我们已经证明，使用我们的新仪器，可以研究单个去湿孔洞随离子注量的发展情况，甚至可以研究它们之间的相互作用。为了说明掠入射时的图案形成，在SiO(2)/Si上25纳米厚的NiO薄膜上以75度的倾斜角进行了3.6 MeV/u (131)Xe离子辐照。实验过程中记录的SEM图像序列揭示了一种层状结构的发展，这种结构在非原位实验中也见过。然而，使用我们新的原位装置，我们不仅能够研究整体平均图案的形成，还能够追踪单个连接结构的形成和衰减，这在标准的非原位实验中几乎是不可能的。
