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巯基稳定的 CdTe 量子点中的载流子动力学。

Charge carrier dynamics in thiol capped CdTe quantum dots.

机构信息

Radiation and Photochemistry Division, Bhabha Atomic Research Center, Mumbai-400 085, India.

出版信息

Phys Chem Chem Phys. 2010 Apr 28;12(16):4210-6. doi: 10.1039/b921130f. Epub 2010 Mar 4.

Abstract

We report the ultrafast charge carrier relaxation dynamics of mercaptopropionic acid capped CdTe quantum dot (QD) using femtosecond transient absorption spectroscopy by exciting the particles with 400 nm laser light and monitoring the transients in the visible to near IR region. Cooling dynamics and population dynamics in different quantized states of the charge carriers were monitored by following the growth kinetics of the bleach at different excitonic positions. The cooling time second and first excitonic states were found to be 150 fs and 500 fs, respectively, which increases non-linearly with its size. Defect states of QD surface play an important role in the cooling dynamics of the charge carriers. Quenching studies have been carried out to find out cooling and trapping dynamics of the individual charge carriers. Electron and hole cooling time were measured to be 700 fs and 150 fs for the first excitonic state using quenchers. Trapping dynamics of electron and hole have been determined by monitoring transient signal at 1000 nm and by using hole and electron quencher, respectively. Electron and hole trapping times have been found to be 700 fs and 1 ps, respectively, in CdTe QD.

摘要

我们使用飞秒瞬态吸收光谱法研究了巯基丙酸(MPA)封端的 CdTe 量子点(QD)的超快载流子弛豫动力学,通过用 400nm 激光激发颗粒并在可见到近红外区域监测瞬变。通过跟踪不同激子位置处的漂白动力学,可以监测载流子在不同量子态中的冷却动力学和粒子数动力学。发现第一和第二激子态的冷却时间分别为 150fs 和 500fs,并且随着尺寸的增加呈非线性增加。QD 表面的缺陷态在载流子的冷却动力学中起着重要作用。进行猝灭研究以找出单个载流子的冷却和俘获动力学。使用猝灭剂测量第一激子态的电子和空穴冷却时间分别为 700fs 和 150fs。通过分别监测 1000nm 处的瞬态信号和使用空穴和电子猝灭剂,确定了电子和空穴的俘获动力学。在 CdTeQD 中,电子和空穴的俘获时间分别为 700fs 和 1ps。

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