Tamaki Yoshiaki, Furube Akihiro, Murai Miki, Hara Kohjiro, Katoh Ryuzi, Tachiya M
National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan.
Phys Chem Chem Phys. 2007 Mar 28;9(12):1453-60. doi: 10.1039/b617552j. Epub 2007 Feb 7.
The transient absorption of nanocrystalline TiO(2) films in the visible and IR wavelength regions was measured under the weak-excitation condition, where the second-order electron-hole recombination process can be ignored. The intrinsic dynamics of the electron-hole pairs in the femtosecond to picosecond time range was elucidated. Surface-trapped electrons and surface-trapped holes were generated within approximately 200 fs (time resolution). Surface-trapped electrons, which gave an absorption peak at around 800 nm, and bulk electrons, which absorbed in the IR wavelength region, decayed with a 500-ps time constant due to relaxation into deep bulk trapping sites. It is already known that, after this relaxation, electrons and holes survive for microseconds. We interpreted these long lifetimes in terms of the prompt spatial charge separation of electrons in the bulk and holes at the surface.
在弱激发条件下测量了纳米晶TiO₂薄膜在可见光和红外波长区域的瞬态吸收,在此条件下二阶电子-空穴复合过程可忽略不计。阐明了飞秒到皮秒时间范围内电子-空穴对的本征动力学。在大约200飞秒(时间分辨率)内产生了表面捕获电子和表面捕获空穴。在800nm左右有吸收峰的表面捕获电子和在红外波长区域吸收的体相电子,由于弛豫到深的体相捕获位点,以500皮秒的时间常数衰减。已知在这种弛豫之后,电子和空穴能存活微秒级。我们根据体相中的电子与表面空穴的快速空间电荷分离来解释这些长寿命。