通过表面光电压谱直接证明了 CdTe 和 CdSe 纳米晶体的 II 型隧道多层结构中的电荷分离。

Charge separation in type II tunneling multilayered structures of CdTe and CdSe nanocrystals directly proven by surface photovoltage spectroscopy.

机构信息

Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universität München, Amalienstr. 54, D-80799 Munich, Germany.

出版信息

J Am Chem Soc. 2010 May 5;132(17):5981-3. doi: 10.1021/ja101629c.

DOI:10.1021/ja101629c

PMID:20384327

Abstract

Charge separation and diffusion in type II multilayered structures of CdTe and CdSe nanocrystals with a polymer spacer are unambiguously proven by surface photovoltage spectroscopy. Holes accumulate in CdTe nanocrystal layers, and the electrons in CdSe nanocrystal layers. An increase of thickness of the polymer spacer strongly decreases the charge separation efficiency. Surface photovoltage transients demonstrate diffusion of the separated charges over several layers of the same kind of nanocrystals.

摘要

通过表面光电压谱明确证明了在具有聚合物间隔物的 II 型多层结构的 CdTe 和 CdSe 纳米晶体中电荷的分离和扩散。空穴在 CdTe 纳米晶层中积累，而电子在 CdSe 纳米晶层中积累。聚合物间隔物厚度的增加强烈降低了电荷分离效率。表面光电压瞬态表明，分离电荷在同种纳米晶体的多个层中扩散。