Liu Fucai, Kong Yongfa, Ge Xinyu, Liu Hongde, Liu Shiguo, Chen Shaolin, Rupp Romano, Xu Jingjun
School of Physics, Nankai University, Tianjin 300071, China.
Opt Express. 2010 Mar 15;18(6):6333-9. doi: 10.1364/OE.18.006333.
We have designed and grown triply doped LiNbO(3):Zr,Cu,Ce crystal and investigated its characteristics of nonvolatile holographic storage. It's observed that the photorefractive sensitivity of LiNbO(3):Zr,Cu,Ce has improved to 0.099 cm/J, which is about one order of magnitude larger than that of congruent LiNbO(3):Cu,Ce. And LiNbO(3):Zr,Cu,Ce also has high suppression to light-induced scattering. Our results indicated that triply doped LiNbO(3):Zr,Cu,Ce is an excellent candidate for nonvolatile holographic data storage.
我们设计并生长了三重掺杂的LiNbO(3):Zr,Cu,Ce晶体，并研究了其非挥发性全息存储特性。观察到LiNbO(3):Zr,Cu,Ce的光折变灵敏度提高到了0.099 cm/J，比同成分的LiNbO(3):Cu,Ce大约高一个数量级。并且LiNbO(3):Zr,Cu,Ce对光致散射也有很高的抑制作用。我们的结果表明，三重掺杂的LiNbO(3):Zr,Cu,Ce是用于非挥发性全息数据存储的极佳候选材料。
