Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Micron. 2010 Aug;41(6):609-14. doi: 10.1016/j.micron.2010.03.009. Epub 2010 Mar 30.
We studied the formation of locally coated sub-10-nm nanopores fabricated by ion-beam milling and ion-beam-induced deposition (IBID) in a thin silicon nitride membrane. Two typical precursor gases representing conductive ((CH(3))(3)Pt(CpCH(3)), CPC for short) and insulating (tetra ethyl oxysilane, TEOS for short) material deposition are used. Three-dimensional electron tomography, EDX and EELS analysis are used to measure the changes in chemical composition and shape of the pores after their formation and at various stages of pore shrinkage. The formation and shrinkage are shown to be due to a shifting competition between IBID and material sputtering during ion-beam exposure. The chemical distribution at the rim of the nanopore is dependent on the precursor gases used: CPC forms a thin carbon layer with small embedded Pt particles at the top and inner surfaces of the nanopore, whereas TEOS forms SiO(x)C(y) with Ga particles dispersed at the rim of the nanopore.
我们研究了通过离子束铣削和离子束诱导沉积（IBID）在薄氮化硅膜中形成的局部涂覆的亚 10nm 纳米孔。使用了两种典型的代表导电（((CH(3))(3)Pt(CpCH(3))，简称 CPC）和绝缘（四乙氧基硅烷，简称 TEOS）材料沉积的前体气体。使用三维电子断层扫描、EDX 和 EELS 分析来测量在纳米孔形成后以及在孔收缩的各个阶段孔的化学成分和形状的变化。结果表明，形成和收缩是由于离子束照射期间 IBID 和材料溅射之间的移动竞争。纳米孔边缘的化学分布取决于使用的前体气体：CPC 在纳米孔的顶部和内表面形成一层含有少量嵌入 Pt 颗粒的薄碳层，而 TEOS 则形成 SiO(x)C(y)，其中 Ga 颗粒分散在纳米孔的边缘。
