碲化镉及其他II-VI族材料中的激光诱导损伤测量

Laser-induced damage measurements in CdTe and other II-VI materials.

作者信息

Soileau M J, Williams W E, Stryland E W, Woodall M A

机构信息

North Texas State University, Center for Applied Quantum Electronics, Physics Department, Denton, Texas 76203, USA.

出版信息

Appl Opt. 1982 Nov 15;21(22):4059-62. doi: 10.1364/AO.21.004059.

DOI:10.1364/AO.21.004059

PMID:20401008

Abstract

Results of laser-induced damage measurements in CdTe and other selected II-VI materials are reported. These studies were conducted using pulsed 1.06-microm radiation from a Nd:YAG laser. The laser pulse width was varied from approximately 40 to 9000 psec (9 nsec). The laser-induced surface breakdown irradiance measured for CdTe over this pulse width range scaled as t(p)(-1/2)[t(p) is the laser pulse width (FWHM)]. This indicates that laser-induced damage in this material is due to linear absorption by a thin surface contamination layer.

摘要

报告了碲化镉（CdTe）和其他选定的II - VI族材料中激光诱导损伤的测量结果。这些研究是使用钕钇铝石榴石（Nd:YAG）激光器发出的脉冲1.06微米辐射进行的。激光脉冲宽度在约40至9000皮秒（9纳秒）之间变化。在此脉冲宽度范围内测量的碲化镉激光诱导表面击穿辐照度按t(p)(-1/2)缩放[t(p)是激光脉冲宽度（半高宽）]。这表明该材料中的激光诱导损伤是由薄表面污染层的线性吸收引起的。