Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, USA.
ACS Appl Mater Interfaces. 2010 May;2(5):1377-83. doi: 10.1021/am1000344.
Polymers to be used in bulk heterojunction (BHJ) solar cells should maintain a low highest occupied molecular orbital (HOMO) energy level as well as a narrow band gap in order to maximize the open circuit voltage (V(oc)) and the short circuit current (J(sc)). To concurrently lower the HOMO energy level and the band gap, we propose to modify the donor-acceptor low band gap polymer strategy by constructing alternating copolymers incorporating a "weak donor" and a "strong acceptor". As a result, the "weak donor" should help maintain a low HOMO energy level while the "strong acceptor" should reduce the band gap via internal charge transfer (ICT). This concept was examined by constructing a library of polymers employing the naphtho[2,1-b:3,4-b']dithiophene (NDT) unit as the weak donor, and benzothiadiazole (BT) as the strong acceptor. PNDT-BT, designed under the "weak donor-strong acceptor" strategy, demonstrated both a low HOMO energy level of -5.35 eV and a narrow band gap of 1.59 eV. As expected, a noticeably high V(oc) of 0.83 V was obtained from the BHJ device of PNDT-BT blended with PCBM. However, the J(sc) ( approximately 3 mA/cm(2)) was significantly lower than the maximum expected current from such a low band gap material, which limited the observed efficiency to 1.27% (with a 70 nm thin film). Further improvements in the efficiency are expected from these materials if new strategies can be identified to (a) increase the molecular weight and (b) improve the hole mobility while still maintaining a low HOMO energy level and a narrow band gap.
用于体异质结 (BHJ) 太阳能电池的聚合物应保持低的最高占据分子轨道 (HOMO) 能级以及窄的带隙,以最大限度地提高开路电压 (V(oc)) 和短路电流 (J(sc))。为了同时降低 HOMO 能级和带隙,我们建议通过构建包含“弱供体”和“强受体”的交替共聚物来修改给体-受体低带隙聚合物策略。结果,“弱供体”应该有助于保持低 HOMO 能级,而“强受体”应该通过内部电荷转移 (ICT) 降低带隙。通过构建使用萘[2,1-b:3,4-b']二噻吩 (NDT) 单元作为弱供体和苯并噻二唑 (BT) 作为强受体的聚合物库来检验这一概念。根据“弱供体-强受体”策略设计的 PNDT-BT 表现出低 HOMO 能级 (-5.35 eV) 和窄带隙 (1.59 eV)。正如预期的那样,从 PNDT-BT 与 PCBM 共混的 BHJ 器件中获得了明显较高的 V(oc)为 0.83 V。然而,J(sc)(约 3 mA/cm(2))明显低于此类低带隙材料的最大预期电流,这将观察到的效率限制在 1.27%(使用 70nm 薄膜)。如果可以确定新的策略来 (a) 提高分子量和 (b) 提高空穴迁移率,同时仍保持低 HOMO 能级和窄带隙,那么这些材料的效率有望进一步提高。