Samsung Advanced Institute of Technology Yong-In, Kyeongki-Do, 449-712, Korea.
Nanotechnology. 2007 Dec 12;18(49):495203. doi: 10.1088/0957-4484/18/49/495203. Epub 2007 Nov 15.
We report a transistor of randomly networked single-walled carbon nanotubes on a glass substrate. The carbon nanotube networks acting as the active components of the thin film transistor were selectively formed on the transistor channel areas that were previously patterned with catalysts to avoid the etching process for isolating nanotubes. The nanotube density was more than 50 microm(-2), which is much larger than the percolation threshold. Transistors were successfully fabricated with a conducting and transparent ZnO for the back-side gate and the top-side gate. This allows the transparent electronics or suggests thin film applications of nanotubes for future opto-electronics.
我们报告了一种晶体管,它由玻璃衬底上的随机网络单壁碳纳米管组成。作为薄膜晶体管的有源元件的碳纳米管网络选择性地形成在晶体管通道区域上,这些区域先前用催化剂图案化以避免用于隔离纳米管的蚀刻工艺。纳米管密度超过 50 微米(-2),这远大于渗流阈值。使用导电和透明的 ZnO 作为背面栅极和顶栅极成功地制造了晶体管。这允许透明电子或为未来的光电应用建议使用纳米管的薄膜应用。