Hur Seung-Hyun, Yoon Myung-Han, Gaur Anshu, Shim Moonsub, Facchetti Antonio, Marks Tobin J, Rogers John A
Department of Materials and Science Engineering, Chemistry, Beckman Institute, University of Illinois, Urbana, Illinois 61801, USA.
J Am Chem Soc. 2005 Oct 12;127(40):13808-9. doi: 10.1021/ja0553203.
We report the implementation of three dimensionally cross-linked, organic nanodielectric multilayers as ultrathin gate dielectrics for a type of thin film transistor device that uses networks of single-walled carbon nanotubes as effective semiconductor thin films. Unipolar n- and p-channel devices are demonstrated by use of polymer coatings to control the behavior of the networks. Monolithically integrating these devices yields complementary logic gates. The organic multilayers provide exceptionally good gate dielectrics for these systems and allow for low voltage, low hysteresis operation. The excellent performance characteristics suggest that organic dielectrics of this general type could provide a promising path to SWNT-based thin film electronics.
我们报道了三维交联有机纳米电介质多层膜的应用，其作为一种薄膜晶体管器件的超薄栅极电介质，该器件使用单壁碳纳米管网络作为有效的半导体薄膜。通过使用聚合物涂层来控制网络行为，展示了单极n沟道和p沟道器件。将这些器件单片集成可得到互补逻辑门。有机多层膜为这些系统提供了异常良好的栅极电介质，并允许低电压、低滞后操作。优异的性能特征表明，这种一般类型的有机电介质可为基于单壁碳纳米管的薄膜电子学提供一条有前景的途径。
