精神分裂症嗅觉事件相关脑电位的神经元产生模式。
Neuronal generator patterns of olfactory event-related brain potentials in schizophrenia.
机构信息
Division of Cognitive Neuroscience, New York State Psychiatric Institute, New York, New York 10032, USA.
出版信息
Psychophysiology. 2010 Nov;47(6):1075-86. doi: 10.1111/j.1469-8986.2010.01013.x.
To better characterize neurophysiologic processes underlying olfactory dysfunction in schizophrenia, nose-referenced 30-channel electroencephalogram was recorded from 32 patients and 35 healthy adults (18 and 18 male) during detection of hydrogen sulfide (constant-flow olfactometer, 200 ms unirhinal exposure). Event-related potentials (ERPs) were transformed to reference-free current source density (CSD) waveforms and analyzed by unrestricted Varimax-PCA. Participants indicated when they perceived a high (10 ppm) or low (50% dilution) odor concentration. Patients and controls did not differ in detection of high (23% misses) and low (43%) intensities and also had similar olfactory ERP waveforms. CSDs showed a greater bilateral frontotemporal N1 sink (305 ms) and mid-parietal P2 source (630 ms) for high than low intensities. N1 sink and P2 source were markedly reduced in patients for high intensity stimuli, providing further neurophysiological evidence of olfactory dysfunction in schizophrenia.
为了更好地描述精神分裂症患者嗅觉功能障碍的神经生理过程，我们对 32 名患者和 35 名健康成年人（18 名和 18 名男性）进行了鼻腔参考的 30 通道脑电图记录，在检测硫化氢时（恒流嗅觉计，200 毫秒单侧暴露）。事件相关电位（ERP）被转换为无参考的电流源密度（CSD）波形，并通过无限制的 Varimax-PCA 进行分析。参与者在感知到高（10 ppm）或低（50%稀释）气味浓度时进行了指示。患者和对照组在检测高（23%的漏检率）和低（43%）强度时没有差异，并且嗅觉 ERP 波形也相似。CSD 显示，高强度（305 毫秒）比低强度（630 毫秒）时双侧额颞部 N1 汇流（N1 sink）和中顶叶 P2 源（P2 source）更大。对于高强度刺激，患者的 N1 汇流和 P2 源明显减少，为精神分裂症患者的嗅觉功能障碍提供了进一步的神经生理学证据。
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