Jin Hyung-Ha, Shin Chansun, Kwon Junhyun
Nuclear Materials Research Division, Korea Atomic Energy Research Institute, 1045 Daedeok-daero, Yuseong-Gu, Daejeon, 305-353, Republic of Korea.
J Electron Microsc (Tokyo). 2010;59(6):463-8. doi: 10.1093/jmicro/dfq020. Epub 2010 May 18.
Cross-section-view TEM samples of ion-irradiated material are successfully fabricated using a focused ion beam (FIB) system and low-energy Ar ion milling. Ga ion-induced damages in FIB processing are reduced remarkably by the means of low-energy Ar ion milling. There are optimized ion milling conditions for the reduction and removal of the secondary artifacts such as defects and ripples. Incident angles and accelerated voltages are especially more important factors on the preservation of a clean surface far from secondary defects and surface roughing due to Ga and Ar ion bombardment.
利用聚焦离子束（FIB）系统和低能氩离子铣削成功制备了离子辐照材料的横截面视图透射电子显微镜（TEM）样品。通过低能氩离子铣削的方法，显著减少了FIB加工中镓离子引起的损伤。对于减少和去除诸如缺陷和波纹等二次伪像，存在优化的离子铣削条件。入射角和加速电压对于保持远离二次缺陷且不因镓离子和氩离子轰击而产生表面粗糙的清洁表面而言，是尤为重要的因素。
