聚焦离子束铣削在从晶体锗制备样品中的应用。

The application of FIB milling for specimen preparation from crystalline germanium.

作者信息

Rubanov S, Munroe P R

机构信息

Electron Microscope Unit, University of New South Wales, Kensington, NSW 2052 Sydney, Australia.

出版信息

Micron. 2004;35(7):549-56. doi: 10.1016/j.micron.2004.03.004.

DOI:10.1016/j.micron.2004.03.004

PMID:15219901

Abstract

The effectiveness of focused ion beam (FIB) for preparation of crystalline germanium specimens has been studied. FIB milling results in strong cellular relief of the germanium surfaces on bulk specimens. This cellular relief, associated with the generation of high densities of point defects during interaction of the specimen with the high-energy gallium beam, can be reduced by using either a lower ion beam currents or a lower beam energy. Even under these milling conditions the cellular relief is, however, still evident on the surface of the TEM specimens as evidenced by so-called 'curtaining' relief. Nevertheless good quality specimens for both conventional and high-resolution imaging may be prepared using FIB milling if low currents are employed for final milling.

摘要

研究了聚焦离子束（FIB）用于制备晶体锗样品的有效性。FIB铣削会使块状样品上的锗表面产生强烈的蜂窝状起伏。这种蜂窝状起伏与样品在与高能镓束相互作用过程中产生的高密度点缺陷有关，可以通过使用较低的离子束电流或较低的束能量来减少。然而，即使在这些铣削条件下，TEM样品表面上的蜂窝状起伏仍然很明显，所谓的“幕状”起伏就证明了这一点。尽管如此，如果在最终铣削时采用低电流，使用FIB铣削仍可制备出用于传统成像和高分辨率成像的高质量样品。