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有机硅化学中的 Thorpe-Ingold 效应。

Thorpe-Ingold effect in organosilicon chemistry.

机构信息

Department of Chemistry, National Taiwan University, Taipei, Taiwan106.

出版信息

Dalton Trans. 2010 Oct 21;39(39):9185-92. doi: 10.1039/c0dt00105h. Epub 2010 Jun 3.

Abstract

Recent advances in the use of the concept of the Thorpe-Ingold effect to rationalise some synthetic chemistry involving organosilicon compounds and, in particular, the photophysical properties of certain dialkylsilylene spaced conjugated chromophores are discussed. The silicon moieties are considered to be insulating tetrahedral spacers in these silicon-containing copolymers. The substituents on silicon can readily be tuned and the steric environment of these substituents around the silicon may dictate the conformation (or helicity) of the copolymers and hence their photophysical properties. This substituent effect on silicon can be understood by the concept of the Thorpe-Ingold effect.

摘要

本文讨论了 Thorpe-Ingold 效应在一些涉及有机硅化合物的合成化学中的应用,特别是某些二烷基硅亚基间隔共轭发色团的光物理性质的应用。硅部分被认为是这些含硅共聚物中的绝缘四面体间隔基。硅上的取代基可以很容易地进行调整,并且这些取代基在硅周围的立体环境可能决定共聚物的构象(或螺旋性),从而影响其光物理性质。硅上的这种取代基效应可以通过 Thorpe-Ingold 效应的概念来理解。

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