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作为一种测量薄膜厚度的技术的拉曼散射:生长中的薄膜中的干涉效应。

Raman scattering as a technique of measuring film thickness: interference effects in thin growing films.

作者信息

McCarty K F

出版信息

Appl Opt. 1987 Oct 15;26(20):4482-6. doi: 10.1364/AO.26.004482.

DOI:10.1364/AO.26.004482
PMID:20523388
Abstract

Simultaneous Raman-scattering and interferometric-thickness measurements have been made during the growth of sodium sulfate films on Pt/10%Rh substrates. For the experimental geometry, the s-polarized Raman-scattered radiation exhibits oscillations in intensity as a function of film thickness, while no intensity oscillations are observed for the p-polarized Raman scattering. The experimental results are modeled by assuming the interference of the multiple reflections of the incident laser beam and the interference of the multiple reflections of the Raman-scattered radiation. The model predicts extreme oscillations in the Raman signal/film thickness relationship for the s-polarized Raman collection and only small oscillations for the p-polarized Raman collection, in qualitative agreement with the experimental results.

摘要

在铂/10%铑基底上生长硫酸钠薄膜的过程中,同时进行了拉曼散射和干涉厚度测量。对于实验几何结构,s偏振拉曼散射辐射的强度随薄膜厚度呈现振荡,而p偏振拉曼散射未观察到强度振荡。通过假设入射激光束的多次反射干涉和拉曼散射辐射的多次反射干涉对实验结果进行建模。该模型预测,对于s偏振拉曼收集,拉曼信号/薄膜厚度关系中存在剧烈振荡,而对于p偏振拉曼收集,只有小振荡,这与实验结果定性相符。

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