Space Vehicles Directorate, Air Force Research Laboratory, 29 Randolph Road, Hanscom Air Force Base, Massachusetts 01731-3010, USA.
J Chem Phys. 2010 Jun 7;132(21):214302. doi: 10.1063/1.3427527.
Electron attachment to SOF(2), SOCl(2), SO(2)F(2), SO(2)FCl, and SO(2)Cl(2) was studied with two flowing-afterglow Langmuir-probe apparatuses over the temperature range 300-900 K. Attachment rate coefficients at 300 K are k(a) = 2.6+/-0.8x10(-10)(SOF(2)), 1.8+/-0.5x10(-8)(SOCl(2)), 4.8+/-0.7x10(-10)(SO(2)F(2)), 2.4+/-0.7x10(-9)(SO(2)Cl(2)), and 2.0+/-0.6x10(-7) cm(3) s(-1)(SO(2)FCl). Arrhenius plots of the data imply activation energies of 56+/-22 meV(SOF(2)), 92+/-40(SO(2)F(2)), 44+/-22 meV(SOCl(2)), and 29+/-15 meV(SO(2)Cl(2)). The rate coefficients for SO(2)FCl decrease slightly with temperature, commensurate with the decrease in the capture rate coefficient. Electron attachment to SOF(2) and SO(2)F(2) is nondissociative, while reaction with SOCl(2), SO(2)FCl, and SO(2)Cl(2) is dissociative. Dissociative attachment is dominated by channels arising from S-Cl bond cleavage but also includes a minor channel forming a dihalide product ion. Branching fraction data are reported for the dissociative attachment channels.
电子与 SOF(2)、SOCl(2)、SO(2)F(2)、SO(2)FCl 和 SO(2)Cl(2)的附着反应在 300-900 K 的温度范围内使用两种流动后辉光 Langmuir 探针装置进行了研究。在 300 K 时的附着速率系数为 k(a) = 2.6+/-0.8x10(-10)(SOF(2))、1.8+/-0.5x10(-8)(SOCl(2))、4.8+/-0.7x10(-10)(SO(2)F(2))、2.4+/-0.7x10(-9)(SO(2)Cl(2))和 2.0+/-0.6x10(-7)cm(3)s(-1)(SO(2)FCl)。数据的 Arrhenius 图表明 SOF(2)的活化能为 56+/-22 meV、SO(2)F(2)为 92+/-40 meV、SOCl(2)为 44+/-22 meV 和 SO(2)Cl(2)为 29+/-15 meV。SO(2)FCl 的速率系数随温度略有下降，与俘获速率系数的下降相一致。电子与 SOF(2)和 SO(2)F(2)的附着是非解离的，而与 SOCl(2)、SO(2)FCl 和 SO(2)Cl(2)的反应是解离的。解离附着主要由 S-Cl 键断裂产生的通道主导，但也包括形成二卤化物产物离子的次要通道。报道了解离附着通道的分支分数数据。
