Roos A, Bergkvist M, Ribbing C G
Appl Opt. 1988 Nov 15;27(22):4660-3. doi: 10.1364/AO.27.004660.
The problem of determining the roughness of the SiO(2)/Si interface is treated. A model is used based on the Fresnel formalism and scalar scattering theory. The resulting formulas express the diffuse reflectance as a function of the optical constants of the two materials, the oxide thickness and the rms roughness of the interfaces. Using the roughness values as adjustable parameters, quantitative information about the interface roughness is obtained from the diffuse reflectance spectra for an SiO(2)/Si double layer. Excellent agreement between calculated and experimental spectra is obtained for an rms roughness of 9.0 nm at the front surface and 2.2 nm at the oxide substrate interface for the case of a low-pressure low-temperature CVD film of SiO(2) on Si.
研究了确定SiO₂/Si界面粗糙度的问题。使用了基于菲涅耳形式和标量散射理论的模型。所得公式将漫反射率表示为两种材料的光学常数、氧化物厚度和界面均方根粗糙度的函数。将粗糙度值作为可调参数，从SiO₂/Si双层的漫反射光谱中获得了有关界面粗糙度的定量信息。对于Si上低压低温CVD SiO₂薄膜的情况，当正面均方根粗糙度为9.0 nm且氧化物-衬底界面处为2.2 nm时，计算光谱与实验光谱之间取得了极佳的一致性。
