Department of Chemistry and Center for Catalysis and Surface Science, Northwestern University, Evanston, Illinois 60208, USA.
Langmuir. 2010 Nov 2;26(21):16486-95. doi: 10.1021/la101378s.
The synthesis of uniformly dispersed nano/subnanometer Pd nanoparticles on oxide supports with atomic layer deposition (ALD) has been studied in terms of growth and morphology. In situ quartz crystal microbalance (QCM) measurements showed that AB-type Pd ALD grew more favorably on TiO(2) than on Al(2)O(3) at 200 °C by the sequential exposure of Pd(II) hexafluoroacetylacetonate (Pd(hfac)(2)) and formalin. The growth rate of AB-type Pd ALD decreased on the Al(2)O(3) surface at a lower deposition temperature, and there was negligible growth at 110 °C. However, a new ABC-type Pd ALD, which we developed recently, operates at significantly lower temperature by growing both protected Pd nanoparticles and the support simultaneously. Additionally, these two types of Pd ALD demonstrated very different growth behaviors. Scanning transmission electron microscopy (STEM) studies showed that the size of the Pd nanoparticles could be well controlled by varying AB-type Pd ALD cycles at 200 °C, and low-temperature ABC-type Pd ALD provides a novel way to synthesize highly uniform, ultrafine, supported Pd nanoparticles directly on high-surface-area supports, regardless of loading. Both types of Pd ALD indicate that ALD is a promising technique for synthesizing advanced catalysts with precise control.
采用原子层沉积(ALD)技术在氧化物载体上合成均匀分散的纳米/亚纳米 Pd 纳米粒子,并研究其生长和形态。原位石英晶体微天平(QCM)测量表明,在 200°C 下,通过顺序暴露 Pd(II)六氟乙酰丙酮(Pd(hfac)(2))和甲醛,AB 型 Pd ALD 在 TiO2 上比在 Al2O3 上更有利于生长。在较低的沉积温度下,AB 型 Pd ALD 在 Al2O3 表面上的生长速率降低,在 110°C 时几乎没有生长。然而,我们最近开发的新型 ABC 型 Pd ALD 通过同时生长保护 Pd 纳米粒子和载体,可以在显著较低的温度下运行。此外,这两种类型的 Pd ALD 表现出非常不同的生长行为。扫描透射电子显微镜(STEM)研究表明,通过在 200°C 下改变 AB 型 Pd ALD 循环次数,可以很好地控制 Pd 纳米粒子的尺寸,而低温 ABC 型 Pd ALD 为在高表面积载体上直接合成高度均匀、超细的负载型 Pd 纳米粒子提供了一种新方法,而与负载无关。这两种类型的 Pd ALD 都表明 ALD 是一种具有精确控制能力的合成先进催化剂的有前途的技术。