Effect of device length and background doping on the relative magnitudes of phase and amplitude modulation in GaAs/AIGaAs PIN multiple quantum well waveguide optical modulators: erratum.

Bradley P J, Whitehead M, Parry G, Mistry P, Roberts J S

Appl Opt. 1989 Oct 1;28(19):4050. doi: 10.1364/AO.28.004050.

Abstract

This erratum Letter points out an error in the caption of Fig. 4 of this paper.

摘要

相似文献

Appl Opt. 1989 Oct 1;28(19):4050. doi: 10.1364/AO.28.004050.

Appl Opt. 1989 Apr 15;28(8):1560-4. doi: 10.1364/AO.28.001560.

Appl Opt. 1992 Jan 20;31(3):338-49. doi: 10.1364/AO.31.000338.

Appl Opt. 1988 Nov 1;27(21):4554-61. doi: 10.1364/AO.27.004554.

Appl Opt. 1996 Feb 20;35(6):928-33. doi: 10.1364/AO.35.000928.

Appl Opt. 2009 Oct 10;48(29):5445-50. doi: 10.1364/AO.48.005445.

Appl Opt. 1995 Jan 10;34(2):323-32. doi: 10.1364/AO.34.000323.

Appl Opt. 1995 Mar 20;34(9):1544-53. doi: 10.1364/AO.34.001544.

Appl Opt. 1992 Apr 20;31(12):2030-5. doi: 10.1364/AO.31.002030.

Nature. 2005 Oct 27;437(7063):1334-6. doi: 10.1038/nature04204.

20分钟写一篇综述，助力文献阅读效率提升50倍。

大模型驱动的PubMed中文搜索引擎

学术文献翻译模型，支持多种主流文档格式。