Byun Y T, Park K H, Kim S H, Choi S S, Lim T K
Appl Opt. 1996 Feb 20;35(6):928-33. doi: 10.1364/AO.35.000928.
We have designed a low-loss single-mode GaAs/AIGaAs optical waveguide with a symmetric five-layer heterostructure at the 1.31-µm wavelength by use of an effective-index method. Waveguides with a W-shaped refractive-index profile have been grown by use of a metallo-organic chemical vapor deposition technique and fabricated with a chemical wet-etching method. Propagation loss has been measured by use of the Fabry-Perot resonance method and a sequential-cleaving experiment. The measured loss is as low as 0.19 dB/cm for waveguides with 2.3-µm thickness and 4.3-µm width, which is comparable to the lowest-loss semiconductor waveguides yet reported. These waveguides could be used to make low-loss modulators for guided-wave devices.
我们利用有效折射率法,设计了一种在1.31微米波长下具有对称五层异质结构的低损耗单模砷化镓/铝镓砷光波导。采用金属有机化学气相沉积技术生长出具有W形折射率分布的波导,并通过化学湿法蚀刻方法进行制作。利用法布里-珀罗共振法和连续切割实验测量了传播损耗。对于厚度为2.3微米、宽度为4.3微米的波导,测得的损耗低至0.19分贝/厘米,这与迄今报道的最低损耗半导体波导相当。这些波导可用于制造用于光波导器件的低损耗调制器。