Université de Rouen, Rouen and Groupe de Physique des Matériaux, France.
J Microsc. 2010 Jul 1;239(1):72-7. doi: 10.1111/j.1365-2818.2009.03359.x.
The statistical 1NN method is an elegant way to derive the composition of small B-enriched clusters in a random AB solid solution from 3D atomic fields. An extension of this method is proposed that includes the contribution of interface region and provides an estimate of the core composition of clusters. This model is applied to boron-implanted silicon containing boron-enriched clusters. A comparison with the previous model is performed. This new approach gives relevant information, i.e. the core composition of clusters and the cluster-matrix interface width.
统计的 1NN 方法是一种从 3D 原子场中得出随机 AB 固溶体中小 B 富集团簇组成的优雅方法。本文提出了一种该方法的扩展，包括界面区域的贡献，并提供了团簇核心组成的估计。该模型应用于含有富硼团簇的硼离子注入硅中。与以前的模型进行了比较。这种新方法提供了相关信息，即团簇的核心组成和团簇-基体界面宽度。
