Fülöp J A, Pálfalvi L, Almási G, Hebling J
Department of Experimental Physics, University of Pécs, Ifjúságú 6, H-7624 Pécs, Hungary.
Opt Express. 2010 Jun 7;18(12):12311-27. doi: 10.1364/OE.18.012311.
Detailed analysis of the tilted-pulse-front pumping scheme used for ultrashort THz pulse generation by optical rectification of femtosecond laser pulses is presented. It is shown that imaging errors in a pulse-front-tilting setup consisting of a grating and a lens can lead to a THz beam with strongly asymmetric intensity profile and strong divergence, thereby limiting applications. Optimized setup parameters are given to reduce such distortions. We also show that semiconductors can offer a promising alternative to LiNbO(3) in high-energy THz pulse generation when pumped at longer wavelengths. This requires tilted-pulse-front pumping, however the small tilt angles allow semiconductors to be easily used in such schemes. Semiconductors can be advantageous for generating THz pulses with high spectral intensity at higher THz frequencies, while LiNbO(3) is better suited to generate THz pulses with very large relative spectral width. By using optimized schemes the upscaling of the energy of ultrashort THz pulses is foreseen.
本文对通过飞秒激光脉冲的光整流产生超短太赫兹脉冲所采用的倾斜脉冲前沿泵浦方案进行了详细分析。结果表明,由光栅和透镜组成的脉冲前沿倾斜装置中的成像误差会导致太赫兹光束强度分布严重不对称且发散强烈,从而限制了其应用。文中给出了优化的装置参数以减少此类畸变。我们还表明,在较长波长泵浦时,半导体在高能太赫兹脉冲产生方面可为铌酸锂提供一种有前景的替代方案。不过这需要倾斜脉冲前沿泵浦,而小倾斜角使得半导体能够轻松应用于此类方案中。半导体在较高太赫兹频率下产生具有高光谱强度的太赫兹脉冲方面可能具有优势,而铌酸锂更适合产生具有非常大相对光谱宽度的太赫兹脉冲。通过使用优化方案,有望实现超短太赫兹脉冲能量的提升。