Pennec Y, Djafari Rouhani B, El Boudouti E H, Li C, El Hassouani Y, Vasseur J O, Papanikolaou N, Benchabane S, Laude V, Martinez A
Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université de Lille1, Villeneuve d'Ascq, France.
Opt Express. 2010 Jun 21;18(13):14301-10. doi: 10.1364/OE.18.014301.
We discuss the simultaneous existence of phononic and photonic band gaps in a periodic array of holes drilled in a Si membrane. We investigate in detail both the centered square lattice and the boron nitride (BN) lattice with two atoms per unit cell which include the simple square, triangular and honeycomb lattices as particular cases. We show that complete phononic and photonic band gaps can be obtained from the honeycomb lattice as well as BN lattices close to honeycomb. Otherwise, all investigated structures present the possibility of a complete phononic gap together with a photonic band gap of a given symmetry, odd or even, depending on the geometrical parameters.
我们讨论了在硅膜上钻出的周期性孔阵列中声子带隙和光子带隙的同时存在。我们详细研究了中心正方形晶格以及每个晶胞包含两个原子的氮化硼(BN)晶格,其中包括简单正方形、三角形和蜂窝晶格等特殊情况。我们表明,蜂窝晶格以及接近蜂窝的BN晶格都可以获得完整的声子和光子带隙。否则,根据几何参数,所有研究的结构都有可能存在完整的声子带隙以及具有特定对称性(奇数或偶数)的光子带隙。