Geskus D, Aravazhi S, Grivas C, Wörhoff K, Pollnau M
Integrated Optical Microsystems Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
Opt Express. 2010 Apr 26;18(9):8853-8. doi: 10.1364/OE.18.008853.
Epitaxially grown, 2.4-microm-thin layers of KY(WO(4))(2):Gd(3+), Lu(3+), Yb(3+), which exhibit a high refractive index contrast with respect to the undoped KY(WO(4))(2) substrate, have been microstructured by Ar beam milling, providing 1.4-microm-deep ridge channel waveguides of 2 to 7 microm width, and overgrown by an undoped KY(WO(4))(2) layer. Channel waveguide laser operation was achieved with a launched pump power threshold of only 5 mW, a slope efficiency of 62% versus launched pump power, and 76 mW output power.
外延生长的2.4微米厚的KY(WO(4))(2):Gd(3+)、Lu(3+)、Yb(3+)层与未掺杂的KY(WO(4))(2)衬底相比具有高折射率对比度,已通过氩离子束铣削进行微结构化,形成了宽度为2至7微米、深度为1.4微米的脊形沟道波导,并通过未掺杂的KY(WO(4))(2)层进行了过度生长。实现了沟道波导激光运转,泵浦光发射功率阈值仅为5毫瓦,相对于泵浦光发射功率的斜率效率为62%,输出功率为76毫瓦。