Mikalsen Martinussen Simen Mikalsen, Frentrop Raimond N, Dijkstra Meindert, Garcia-Blanco Sonia Maria
Optical Sciences Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
Micromachines (Basel). 2020 Nov 24;11(12):1033. doi: 10.3390/mi11121033.
KY(WO) is a promising material for on-chip laser sources. Deep etching of small KY(WO) samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices. There are, however, several difficulties that need to be overcome before deep etching of KY(WO) can be realized in small samples in a reproducible manner. In this paper, we address the problems of (i) edge bead formation when using thick resist on small samples, (ii) sample damage during lithography mask touchdown, (iii) resist reticulation during prolonged argon-based inductively coupled plasma reactive ion etching (ICP-RIE), and (iv) redeposited material on the feature sidewalls. We demonstrate the etching of 6.5 µm deep features and the removal of redeposited material using a wet etch procedure. This process will enable the realization of waveguides both in ion-irradiated KY(WO) as well as thin KY(WO) membranes transferred onto glass substrate by bonding and subsequent polishing.
KY(WO)是用于片上激光源的一种很有前景的材料。将小型KY(WO)样品进行深蚀刻并结合各种薄膜沉积技术，对于制造此类器件是很有必要的。然而，在能够以可重复的方式在小型样品中实现KY(WO)的深蚀刻之前，有几个难题需要克服。在本文中，我们解决了以下问题：(i) 在小型样品上使用厚光刻胶时边缘珠的形成，(ii) 光刻掩膜接触时样品的损伤，(iii) 在基于氩气的电感耦合等离子体反应离子蚀刻（ICP-RIE）过程中光刻胶的网状化，以及(iv) 特征侧壁上的再沉积材料。我们展示了6.5微米深特征的蚀刻以及使用湿法蚀刻程序去除再沉积材料的过程。该工艺将能够在离子辐照的KY(WO)以及通过键合和后续抛光转移到玻璃基板上的薄KY(WO)膜中实现波导。
