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微/纳结构化黑硅的电润湿特性。

Electrowetting properties of micro/nanostructured black silicon.

机构信息

Institute of Electronic Structure and Laser, Foundation for Research & Technology-Hellas, P.O. Box 1385, Heraklion 711 10, Greece.

出版信息

Langmuir. 2010 Aug 3;26(15):13007-14. doi: 10.1021/la101138u.

Abstract

This paper reports on the electrowetting on dielectric (EWOD) properties of dual rough black silicon (Si) surfaces, produced by pulsed laser structuring of Si wafers and subsequently coating with a thermally grown oxide and a chloroalkylsilane layer. By varying the laser fluence, it was possible to tune the black Si wettability, from hydrophobicity to water repellence, through a systematic and reproducible variation of the surface roughness at micro- and nanoscales. It is shown that a liquid droplet on these surfaces can be readily switched between superhydrophobicity and hydrophilicity by applying moderate external electric fields. This behavior is reversible or irreversible depending on the geometry of the patterned structures and the water repellence characteristics of the different surfaces. The fundamental role of structural and dynamic wettability characteristics on the switching behavior during the EWOD process is investigated and discussed. The results indicate the potential use of dual rough black Si for EWOD applications.

摘要

本文报告了电润湿(EWOD)在双层粗糙黑硅(Si)表面上的性质,这种双层粗糙黑硅表面通过硅片的脉冲激光结构化处理以及随后涂覆热生长氧化物和氯烷基硅烷层而制成。通过改变激光能量密度,可以在微米和纳米尺度上系统且可重现地改变表面粗糙度,从而实现黑硅润湿性从疏水性到抗水性的调节。结果表明,在这些表面上施加适度的外部电场,就可以使液滴在超疏水性和亲水性之间轻松切换。这种行为是可逆的还是不可逆的,取决于图案化结构的几何形状和不同表面的抗水性特征。文中还研究和讨论了结构和动态润湿性特征在 EWOD 过程中的切换行为中的基本作用。研究结果表明,双层粗糙黑硅在 EWOD 应用中具有潜在的用途。

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