Lapierre Florian, Thomy Vincent, Coffinier Yannick, Blossey Ralf, Boukherroub Rabah
Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS-8520, Cité Scientifique, Avenue Poincaré, BP 60069, 59652 Villeneuve d'Ascq, France.
Langmuir. 2009 Jun 2;25(11):6551-8. doi: 10.1021/la803756f.
The paper reports on wetting, electrowetting (EW), and systematic contact angle hysteresis measurements after electrowetting of superhydrophobic silicon nanowire surfaces (NWs). The surfaces consist of C4F8-coated silicon nanowires grown on Si/SiO2 substrate. Different surfaces modulating (i) the dielectric layer thickness and (ii) the nanotexturation were investigated in this study. It was found that the superhydrophobic NWs display different EW behaviors according to their double nanotexturation with varying droplet impalement levels. Some surfaces exhibited a total reversibility to EW with no impalement (contact angle variation of 35+/-2 degrees at 190 VTRMS with deionized water), whereas other surfaces showed nonreversible behavior to EW with partial droplet impalement. A scenario is proposed to explain the unique properties of these surfaces.
本文报道了超疏水硅纳米线表面(NWs)的润湿性、电润湿(EW)以及电润湿后的系统接触角滞后测量结果。这些表面由生长在Si/SiO2衬底上的C4F8涂层硅纳米线组成。本研究考察了不同的表面,这些表面通过(i)调节介电层厚度和(ii)纳米纹理化来实现。研究发现,超疏水纳米线根据其具有不同液滴刺入水平的双重纳米纹理化表现出不同的电润湿行为。一些表面对电润湿表现出完全可逆性且无刺入现象(在190 Vrms电压下,使用去离子水时接触角变化为35±2度),而其他表面对电润湿表现出不可逆行为且伴有部分液滴刺入。文中提出了一种情形来解释这些表面的独特性质。