铋玻璃/硅纳米晶超晶格中的敏化超宽带近红外发射。

Sensitized superbroadband near-IR emission in bismuth glass/Si nanocrystal superlattices.

机构信息

Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan.

出版信息

Opt Lett. 2010 Jul 1;35(13):2215-7. doi: 10.1364/OL.35.002215.

DOI:10.1364/OL.35.002215

PMID:20596198

Abstract

We show that sensitized superbroadband near-IR (NIR) emission in bismuth glass/Si nanocrystal superlattices can be realized. Photoluminescence is enhanced by 1 order of magnitude in this structure. We observed that the excitation wavelength dependence of the NIR emission does not show any distinct structure corresponding to the direct transition of bismuth IR-active centers. Our results suggest that the enhanced emission might result from the energy transfer from Si nanocrystals to IR-active bismuth. This structure may find broad applications for broadband amplifiers and broadly tunable laser sources.

摘要

我们表明，可以实现铋玻璃/硅纳米晶超晶格中的敏化超宽带近红外（NIR）发射。在这种结构中，光致发光增强了 1 个数量级。我们观察到，NIR 发射的激发波长依赖性没有显示出任何与铋 IR 活性中心的直接跃迁相对应的明显结构。我们的结果表明，增强的发射可能是由于能量从硅纳米晶转移到 IR 活性铋。这种结构可能在宽带放大器和宽可调谐激光源中有广泛的应用。