Nanostech Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz-Khas, New Delhi, 110016, India.
Nanoscale Res Lett. 2010 May 15;5(7):1211-6. doi: 10.1007/s11671-010-9628-8.
Carbon nanotubes (CNTs) were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110-130 μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.
采用热化学气相沉积技术,将碳纳米管(CNTs)沉积在各种基底上,包括未经处理的硅和石英、铁沉积的硅和石英、HF 处理的硅、氮化硅沉积的硅、铜箔和不锈钢网。描述了在这些基底上合成 CNTs 的生长和微观结构的最佳参数。结果表明,CNTs 的生长强烈受到基底的影响。在石英、铁沉积的硅和石英、未经处理的硅以及氮化硅沉积的硅基底上,发现了垂直排列的多壁 CNTs。另一方面,在不锈钢网上观察到了意大利面条型生长,而在 HF 处理的硅和铜上则没有 CNT 生长。氮化硅沉积的硅基底被证明是一种很有前途的基底,可以生长长度为 110-130μm 的长垂直排列 CNTs。我们根据这些结果提出了一种垂直排列和意大利面条型 CNTs 生长的可能机制。