Gangele Aparna, Sharma Chandra Shekhar, Pandey Ashok Kumar
J Nanosci Nanotechnol. 2017 Apr;17(4):2256-273. doi: 10.1166/jnn.2017.13818.
Immense development has been taken place not only to increase the bulk production, repeatability and yield of carbon nanotubes (CNTs) in last 25 years but preference is also given to acknowledge the basic concepts of nucleation and growth methods. Vertically aligned carbon nanotubes (VAC-NTs) are forest of CNTs accommodated perpendicular on a substrate. Their exceptional chemical and physical properties along with sequential arrangement and dense structure make them suitable in various fields. The effect of different type of selected substrate, carbon precursor, catalyst and their physical and chemical status, reaction conditions and many other key parameters have been thoroughly studied and analysed. The aim of this paper is to specify the trend and summarize the effect of key parameters instead of only presenting all the experiments reported till date. The identified trends will be compared with the recent observations on the growth of different types of patterned VACNTs. In this review article, we have presented a comprehensive analysis of different techniques to precisely determine the role of different parameters responsible for the growth of patterned vertical aligned carbon nanotubes. We have covered various techniques proposed in the span of more than two decades to fabricate the different structures and configurations of carbon nanotubes on different types of substrates. Apart from a detailed discussion of each technique along with their specific process and implementation, we have also provided a critical analysis of the associated constraints, benefits and shortcomings. To sum it all for easy reference for researchers, we have tabulated all the techniques based on certain main key factors. This review article comprises of an exhaustive discussion and a handy reference for researchers who are new in the field of synthesis of CNTs or who wants to get abreast with the techniques of determining the growth of VACNTs arrays.
在过去25年里，不仅在提高碳纳米管（CNT）的批量生产、可重复性和产量方面取得了巨大进展，而且人们也开始重视成核和生长方法的基本概念。垂直排列的碳纳米管（VAC-NT）是垂直排列在基底上的碳纳米管阵列。它们卓越的化学和物理性质，以及有序的排列和致密的结构，使其适用于各个领域。人们已经对不同类型的选定基底、碳前驱体、催化剂及其物理和化学状态、反应条件以及许多其他关键参数的影响进行了深入研究和分析。本文的目的是明确发展趋势并总结关键参数的影响，而不是仅仅呈现迄今为止报道的所有实验。将把确定的趋势与最近关于不同类型图案化VACNT生长的观察结果进行比较。在这篇综述文章中，我们对不同技术进行了全面分析，以精确确定负责图案化垂直排列碳纳米管生长的不同参数的作用。我们涵盖了二十多年来提出的各种技术，用于在不同类型基底上制造不同结构和构型的碳纳米管。除了对每种技术及其具体工艺和实施进行详细讨论外，我们还对相关的限制、优点和缺点进行了批判性分析。为了便于研究人员参考，我们根据某些主要关键因素将所有技术制成了表格。这篇综述文章为碳纳米管合成领域的新手或想要了解VACNT阵列生长测定技术的研究人员提供了详尽的讨论和便捷的参考。
