Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, 420 Westwood Plaza, Los Angeles, CA 90095, USA.
Small. 2010 Aug 2;6(15):1663-8. doi: 10.1002/smll.201000514.
Nanotransfer-printing lithography simplifies the fabrication of a 3D nanoscale crossbar circuit. Gold nanowires 100 nm in width and with 100 nm spacing are printed onto a polymer layer of electrically switchable, LiClO(4)-doped poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] mixed with an epoxy. The transfer process can be repeated to obtain a multilayer nanoscale crossbar structure. This process paves the way toward fabricating 3D circuits with ultrahigh device density and neuromorphic architectures.
纳米转印印刷光刻简化了 3D 纳米交叉线电路的制造过程。将宽度为 100nm 且间距为 100nm 的金纳米线印刷到由电可切换的、掺杂有 LiClO4 的聚[2-甲氧基-5-(2'-乙基己氧基)-对苯乙炔]与环氧树脂混合而成的聚合物层上。可以重复转移过程以获得多层纳米交叉线结构。该工艺为制造具有超高器件密度和神经形态结构的 3D 电路铺平了道路。