Zhang Yan, Ning Yongqiang, Qin Li, Wang Ye, Cui Jinjiang, Liu Guangyu, Zhang Xing, Wang Zhenfu, Sun Yanfang, Liu Yun, Wang Lijun
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, 3888 Southeast Lake Road, Changchun 130033, China.
Appl Opt. 2010 Jul 1;49(19):3793-7. doi: 10.1364/AO.49.003793.
A 980 nm bottom-emitting vertical-cavity surface-emitting laser (VCSEL) with a p-contact diameter is reported to achieve high power and good beam quality. A numerical simulation is conducted on the current spreading in a VCSEL with oxidation between the active region and the p-type distributed Bragg reflector. It is found that, for a particular oxide aperture diameter, somewhat homogeneous current distribution can be achieved for a VCSEL with an optimized p-contact diameter. The far-field divergence angle from a 600 microm diameter VCSEL is suppressed from 30 degrees to 15 degrees, and no strong sidelobe is observed in the far-field pattern by using the optimized p-contact diameter. There is a slight rise in threshold and optical output power that is due to the p-contact optimization. By improving the device packaging method, the maximum optical output power of the device is 2.01 W.
据报道，一种具有p接触直径的980纳米底部发射垂直腔面发射激光器（VCSEL）可实现高功率和良好的光束质量。对有源区和p型分布布拉格反射器之间存在氧化层的VCSEL中的电流扩展进行了数值模拟。结果发现，对于特定的氧化孔径直径，具有优化p接触直径的VCSEL可以实现某种程度上均匀的电流分布。通过使用优化的p接触直径，直径为600微米的VCSEL的远场发散角从30度抑制到15度，并且在远场图案中未观察到强旁瓣。由于p接触优化，阈值和光输出功率略有上升。通过改进器件封装方法，该器件的最大光输出功率为2.01瓦。
