一步法合成单分散 In 掺杂 ZnO 纳米晶。

One-Step Synthesis of Monodisperse In-Doped ZnO Nanocrystals.

机构信息

State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China.

出版信息

Nanoscale Res Lett. 2010 Mar 31;5(5):882-8. doi: 10.1007/s11671-010-9579-0.

Abstract

A method for the synthesis of high quality indium-doped zinc oxide (In-doped ZnO) nanocrystals was developed using a one-step ester elimination reaction based on alcoholysis of metal carboxylate salts. The resulting nearly monodisperse nanocrystals are well-crystallized with typically crystal structure identical to that of wurtzite type of ZnO. Structural, optical, and elemental analyses on the products indicate the incorporation of indium into the host ZnO lattices. The individual nanocrystals with cubic structures were observed in the 5% In-ZnO reaction, due to the relatively high reactivity of indium precursors. Our study would provide further insights for the growth of doped oxide nanocrystals, and deepen the understanding of doping process in colloidal nanocrystal syntheses.

摘要

一种使用基于金属羧酸盐醇解的一步酯消除反应合成高质量掺铟氧化锌 (In-doped ZnO) 纳米晶体的方法。所得的近单分散纳米晶体具有典型的纤锌矿型 ZnO 晶体结构,结晶良好。对产物进行的结构、光学和元素分析表明,铟已掺入到宿主 ZnO 晶格中。在 5%的 In-ZnO 反应中,由于铟前体的相对高反应性,观察到具有立方结构的单个纳米晶体。我们的研究将为掺杂氧化物纳米晶体的生长提供进一步的见解,并加深对胶体纳米晶体合成中掺杂过程的理解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4adc/3241200/8a1019749bf1/1556-276X-5-882-1.jpg

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