Ni Jun, Yan He, Wang Anchuang, Yang Yu, Stern Charlotte L, Metz Andrew W, Jin Shu, Wang Lian, Marks Tobin J, Ireland John R, Kannewurf Carl R
Department of Chemistry, the Department of Electrical and Computer Engineering, and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, USA.
J Am Chem Soc. 2005 Apr 20;127(15):5613-24. doi: 10.1021/ja044643g.
Four diamine adducts of bis(hexafluoroacetylacetonato)zinc [Zn(hfa)(2).(diamine)] can be synthesized in a single-step reaction. Single crystal X-ray diffraction studies reveal monomeric, six-coordinate structures. The thermal stabilities and vapor phase transport properties of these new complexes are considerably greater than those of conventional solid zinc metal-organic chemical vapor deposition (MOCVD) precursors. One of the complexes in the series, bis(1,1,1,5,5,5-hexafluoro-2,4-pentadionato)(N,N'-diethylethylenediamine)zinc, is particularly effective in the growth of thin films of the transparent conducting oxide Zn-In-Sn-O (ZITO) because of its superior volatility and low melting point of 64 degrees C. ZITO thin films with In contents ranging from 40 to 70 cation % (a metastable phase) were grown by low-pressure MOCVD. These films exhibit conductivity as high as 2900 S/cm and optical transparency comparable to or greater than that of commercial Sn-doped indium oxide (ITO) films. ZITO films with the nominal composition of ZnIn(2.0)Sn(1.5)O(z)() were used in fabrication of polymer light-emitting diodes. These devices exhibit light outputs and current efficiencies almost 70% greater than those of ITO-based control devices.
双（六氟乙酰丙酮）锌[Zn(hfa)₂·(二胺)]的四种二胺加合物可通过一步反应合成。单晶X射线衍射研究揭示了单体六配位结构。这些新型配合物的热稳定性和气相传输性能比传统的固态锌金属有机化学气相沉积（MOCVD）前驱体要高得多。该系列中的一种配合物，双（1,1,1,5,5,5 - 六氟 - 2,4 - 戊二酮）（N,N'-二乙基乙二胺）锌，因其优异的挥发性和64℃的低熔点，在透明导电氧化物Zn - In - Sn - O（ZITO）薄膜的生长中特别有效。通过低压MOCVD生长了In含量范围为40至70阳离子%（亚稳相）的ZITO薄膜。这些薄膜表现出高达2900 S/cm的电导率和与商业掺锡氧化铟（ITO）薄膜相当或更高的光学透明度。标称组成为ZnIn₂.₀Sn₁.₅Oₓ的ZITO薄膜用于聚合物发光二极管的制造。这些器件的光输出和电流效率比基于ITO的对照器件高出近70%。
