Department of Medicine, Rheumatology, and Clinical Immunology, Charité University Medicine Berlin, Germany.
J Immunol. 2010 Sep 1;185(5):3103-10. doi: 10.4049/jimmunol.1000911. Epub 2010 Aug 6.
Rechallenge with T cell-dependent Ags induces memory B cells to re-enter germinal centers (GCs) and undergo further expansion and differentiation into plasma cells (PCs) and secondary memory B cells. It is currently not known whether the expanded population of memory B cells and PCs generated in secondary GCs are clonally related, nor has the extent of proliferation and somatic hypermutation of their precursors been delineated. In this study, after secondary tetanus toxoid (TT) immunization, TT-specific PCs increased 17- to 80-fold on days 6-7, whereas TT-specific memory B cells peaked (delayed) on day 14 with a 2- to 22-fold increase. Molecular analyses of V(H)DJ(H) rearrangements of individual cells revealed no major differences of gene usage and CDR3 length between TT-specific PCs and memory B cells, and both contained extensive evidence of somatic hypermutation with a pattern consistent with GC reactions. This analysis identified clonally related TT-specific memory B cells and PCs. Within clusters of clonally related cells, sequences shared a number of mutations but also could contain additional base pair changes. The data indicate that although following secondary immunization PCs can derive from memory B cells without further somatic hypermutation, in some circumstances, likely within GC reactions, asymmetric mutation can occur. These results suggest that after the fate decision to differentiate into secondary memory B cells or PCs, some committed precursors continue to proliferate and mutate their V(H) genes.
再次接触 T 细胞依赖的抗原会诱导记忆 B 细胞重新进入生发中心 (GC),并进一步扩增和分化为浆细胞 (PC) 和次级记忆 B 细胞。目前尚不清楚在次级 GC 中产生的扩增的记忆 B 细胞和 PC 群体是否具有克隆相关性,也尚未确定其前体的增殖和体细胞超突变的程度。在这项研究中,在二次破伤风类毒素 (TT) 免疫后,TT 特异性 PC 在第 6-7 天增加了 17-80 倍,而 TT 特异性记忆 B 细胞在第 14 天达到峰值(延迟),增加了 2-22 倍。对单个细胞的 V(H)DJ(H) 重排的分子分析表明,TT 特异性 PC 和记忆 B 细胞之间在基因使用和 CDR3 长度方面没有主要差异,并且都包含广泛的体细胞超突变证据,其模式与 GC 反应一致。该分析确定了克隆相关的 TT 特异性记忆 B 细胞和 PC。在克隆相关细胞簇内,序列共享许多突变,但也可能包含额外的碱基变化。数据表明,尽管在二次免疫后,PC 可以从不进一步体细胞超突变的记忆 B 细胞中衍生而来,但在某些情况下,可能在 GC 反应中,会发生不对称突变。这些结果表明,在分化为次级记忆 B 细胞或 PC 的命运决定之后,一些定型前体继续增殖并突变其 V(H)基因。