Advanced Technology Research Laboratories, Sharp Corporation, Tenri, Nara, Japan.
Nanotechnology. 2010 Sep 10;21(36):365301. doi: 10.1088/0957-4484/21/36/365301. Epub 2010 Aug 11.
We demonstrate the synthesis of high density periodic 2D nanodot patterns using reverse sputtering in magnetron sputtering equipment on a single crystal Si substrate and sputter-deposited Si-thin film. In this etching process, a minute amount of Ta is supplied by DC sputtering or splashing from the substrate holder surface. STEM, EDX, TEM and XPS analyses confirmed preferentially localized Ta-silicide in the nanodots. The nanodot pattern formation is attributed to the repeated adsorption and desorption of Ta and Si molecules forming Ta-silicide, and its segregation with self-organization. We also discuss power and time dependence of the nanodot pattern sizes and hole structure formation as a side-effect. This simple process is conducted at room temperature and makes use of an extremely simple setup. Our result promises a significant improvement in the productivity of quantum dot devices and has the potential to trigger their worldwide spread.
我们展示了使用磁控溅射设备在单晶 Si 衬底上反向溅射和溅射沉积 Si 薄膜来合成高密度周期性 2D 纳米点图案的方法。在这个刻蚀过程中，通过直流溅射或从衬底支架表面溅射，提供少量的 Ta。STEM、EDX、TEM 和 XPS 分析证实了纳米点中优先存在的 Ta 硅化物的局域化。纳米点图案的形成归因于 Ta 和 Si 分子的反复吸附和解吸，形成 Ta 硅化物，并通过自组织进行其分凝。我们还讨论了纳米点图案尺寸和孔结构形成的功率和时间依赖性，这是一个副作用。这个简单的过程在室温下进行，使用极其简单的设置。我们的结果有望显著提高量子点器件的生产率，并有可能引发其在全球范围内的广泛传播。
