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碳基底上烷基硫醇单分子层的形成与稳定性

The Formation and Stability of Alkylthiol Monolayers on Carbon Substrates.

作者信息

Lockett Matthew R, Smith Lloyd M

机构信息

Department of Chemistry, University of Wisconsin-Madison.

出版信息

J Phys Chem C Nanomater Interfaces. 2010 Jul 7;114(29):12635-12641. doi: 10.1021/jp102821x.

Abstract

The formation and stability of alkylthiol monolayers on amorphous carbon thin films are investigated. Alkylthiol monolayers were prepared via a two-step, wet chemical process in which the carbon surface was first halogenated and then incubated with (4-(trifluoromethyl)phenyl)methanethiol (4tBM). The 4tBM covalently attaches to the surface in a substitution reaction in which the 4tBM thiol replaces the surface halogen. Studies of the substitution mechanism showed that monolayer formation is affected by the nature of the surface-bound halogen as well as the concentration and nucleophilicity of the 4tBM sulfur atom, consistent with a bimolecular (S(N)2) substitution reaction mechanism. The alkylthiol monolayers are stable over a wide range of solvent, pH, and temperature conditions.

摘要

研究了烷基硫醇单分子层在非晶碳薄膜上的形成和稳定性。烷基硫醇单分子层通过两步湿化学过程制备,其中碳表面首先进行卤化,然后与(4-(三氟甲基)苯基)甲硫醇(4tBM)孵育。4tBM通过取代反应共价连接到表面,其中4tBM硫醇取代表面卤素。取代机理研究表明,单分子层的形成受表面结合卤素的性质以及4tBM硫原子的浓度和亲核性的影响,这与双分子(S(N)2)取代反应机理一致。烷基硫醇单分子层在广泛的溶剂、pH和温度条件下都很稳定。

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