Ardalan Pendar, Musgrave Charles B, Bent Stacey F
Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
Langmuir. 2009 Feb 17;25(4):2013-25. doi: 10.1021/la803468e.
We have studied Ge halide passivation and formation of 1-octadecanethiolate self-assembled monolayers (SAMs) at Cl- and Br-terminated Ge(100) and Ge(111) surfaces. The results of water contact angle measurements, ellipsometry, transmission infrared spectroscopy, X-ray photoelectron spectroscopy, and Auger electron spectroscopy show that good quality 1-alkanethiolate SAMs can be achieved at both Cl- and Br-terminated surfaces via direct Ge-S bonds. The quality of the SAMs depends on the concentration and the solvent of the 1-alkanethiol solution. Moreover, SAMs formed at Ge(100) surfaces have higher water contact angles, thicknesses, and ambient stability than those formed at Ge(111) surfaces. Surface passivation and light are found to play an important role in the packing and stability of the SAMs. Furthermore, well-packed SAMs can be retrieved by repassivation after degradation due to ambient exposure. This work presents novel routes for Ge surface passivation.
我们研究了卤化锗钝化以及在氯和溴终止的Ge(100)和Ge(111)表面形成十八烷硫醇自组装单分子层(SAMs)的过程。水接触角测量、椭偏仪、透射红外光谱、X射线光电子能谱和俄歇电子能谱的结果表明,通过直接的Ge-S键,在氯和溴终止的表面都可以实现高质量的1-链烷硫醇SAMs。SAMs的质量取决于1-链烷硫醇溶液的浓度和溶剂。此外,在Ge(100)表面形成的SAMs比在Ge(111)表面形成的具有更高的水接触角、厚度和环境稳定性。发现表面钝化和光照在SAMs的堆积和稳定性中起着重要作用。此外,由于环境暴露而降解后,可以通过再钝化来恢复排列良好的SAMs。这项工作提出了锗表面钝化的新途径。