Hiromoto N, Itabe T, Shibai H, Matsuhara H, Nakagawa T, Okuda H
Appl Opt. 1992 Feb 1;31(4):460-5. doi: 10.1364/AO.31.000460.
A stressed Ge:Ga photoconductor array with three elements applied to the Infrared Telescope in Space satellite was fabricated and tested in experiments at 2.0 K in very low-photon-influx conditions (~ 10(5) photons/s). Stress was applied to three Ge:Ga detectors in a series by a stable and compact stressing apparatus by using cone-disk springs. The cutoff wavelength was ~ 180 microm. Responsivity was ~ 100 A/W, and the product of quantum efficiency and photoconductive gain, etaG, was ~ 1 with a chopping frequency of 2 Hz. The noise equivalent power was <5 x 10(-18) W/Hz((1/2)) when low-noise transimpedance amplifiers were used. A slow transient response and a nonlinear response that was dependent on the background photon influx were observed in the experiments. The latter showed that the etaG had a time constant tau(c) that was proportional to N(ph)(-(1/2)).
制造了一种带有三个元件的应力锗镓光电导体阵列，并将其应用于太空卫星上的红外望远镜，在2.0 K温度下、极低光子通量条件（约10⁵个光子/秒）下进行了实验测试。通过使用锥形盘簧的稳定且紧凑的应力施加装置，对三个串联的锗镓探测器施加应力。截止波长约为180微米。响应度约为100 A/W，量子效率与光电导增益的乘积ηG在斩波频率为2 Hz时约为1。当使用低噪声跨阻放大器时，噪声等效功率小于5×10⁻¹⁸ W/Hz¹/²。实验中观察到了缓慢的瞬态响应以及依赖于背景光子通量的非线性响应。后者表明ηG具有一个时间常数τc，该时间常数与Nph⁻¹/²成正比。
